component

IPW90R1K0C3

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistoripw90r1k0c3factory-2.0.0extractor-text

Verified IPW90R1K0C3

by Ray · last 7 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: IPW90R1K0C3 · TO-247 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 11-page datasheet
  • •distributor (warn): no ['digikey'] number
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-72wo8w1t/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ipw90r1k0c3.kicad_sym✓ ipw90r1k0c3.kicad_mod✓ ipw90r1k0c3.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 2h ago
viewers ipw90r1k0c3: viewers · Ray 2h ago
ipw90r1k0c3-etched.glb Publish 0.1.0 · Ray 2h ago
ipw90r1k0c3-etched.step ipw90r1k0c3: factory component page (tier=lcsc) · Ray 2h ago
ipw90r1k0c3-hero.glb ipw90r1k0c3: hero GLB from the etched model (keeps the MPN mark) · Ray 2h ago
ipw90r1k0c3-hero.overlay.json Publish 0.1.0 · Ray 2h ago
ipw90r1k0c3.glb Publish 0.1.0 · Ray 2h ago
ipw90r1k0c3.kicad_mod Publish 0.1.0 · Ray 2h ago
ipw90r1k0c3.kicad_sym Publish 0.1.0 · Ray 2h ago
ipw90r1k0c3.lbr Publish 0.1.0 · Ray 2h ago
ipw90r1k0c3.step Publish 0.1.0 · Ray 2h ago
package.json Publish 0.1.0 · Ray 2h ago
page.json Set visibility: public · Ray 2h ago
README.md Publish 0.1.0 · Ray 2h ago
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray 2h ago

IPW90R1K0C3

Infineon Technologies · MOSFETs · TO-247

IPW90R1K0C3 from Infineon Technologies, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate pin (pin 1) of the MOSFET; static gate-source voltage limited to ±20 V and AC (f>1 Hz) to ±30 V, with a gate threshold of 2.5 to 3.5 V at ID=0.37 mA.
2 D passive Drain pin (pin 2) of the MOSFET, rated for VDS of 900 V at TJ=25 °C with continuous drain current of 5.7 A at TC=25 °C.
3 S passive Source pin (pin 3) of the MOSFET, carrying the continuous diode forward current of 3.3 A at TC=25 °C through the body diode.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 5.7 A TC=25 °C 1
Continuous drain current ID 3.6 A TC=100 °C 1
Pulsed drain current ID,pulse 12 A TC=25 °C 1
Avalanche energy, single pulse EAS 97 mJ ID=1.1 A, VDD=50 V 1
Avalanche energy, repetitive EAR 0.37 mJ ID=1.1 A, VDD=50 V 1
Avalanche current, repetitive IAR 1.1 A 1
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400 V 1
Gate source voltage, static VGS -30 30 V static 1
Gate source voltage, AC VGS -20 20 V AC (f>1 Hz) 1
Power dissipation Ptot 89 W TC=25 °C 1
Operating and storage temperature TJ, Tstg -55 150 °C 1
Mounting torque M 60 Ncm M3 and M3.5 screws 1
Diode pulse current IS,pulse 13 A 2
Reverse diode dv/dt dv/dt 4 V/ns ISD≤ID, di/dt≤200 A/µs, VDClink=400V 2
Thermal resistance, junction - case RthJC 1.4 K/W 2
Thermal resistance, junction - ambient RthJA 62 K/W leaded 2
Soldering temperature, wavesoldering Tsold 260 °C 1.6 mm (0.063 in.) from case for 10 s; wave soldering only at leads 2
Drain-source breakdown voltage V(BR)DSS 900 V VGS=0 V, ID=250 µA 2
Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS, ID=0.37 mA 2
Zero gate voltage drain current IDSS 1 µA VDS=900 V, VGS=0 V, Tj=25 °C 2
Gate-source leakage current IGSS 100 nA VGS=20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 0.78 1 Ω VGS=10 V, ID=3.3 A, Tj=25 °C 2
Reverse diode forward voltage VSD 0.8 1.2 V VGS=0 V, IF=3.3 A, Tj=25 °C 3
Zero gate voltage drain current IDSS 10 µA VDS=900 V, VGS=0 V, Tj=150 °C 2
Drain-source on-state resistance RDS(on) 2.1 Ω VGS=10 V, ID=3.3 A, Tj=150 °C 2
Gate resistance RG 1.3 Ω f=1 MHz, open drain 2
Input capacitance Ciss 850 pF VGS=0 V, VDS=100 V, f=1 MHz 3
Output capacitance Coss 42 pF VGS=0 V, VDS=100 V, f=1 MHz 3
Effective output capacitance, energy related Co(er) 28 pF VGS=0 V, VDS=0 V to 500 V 3
Effective output capacitance, time related Co(tr) 100 pF VGS=0 V, VDS=0 V to 500 V 3
Turn-on delay time td(on) 70 ns VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω 3
Rise time tr 20 ns VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω 3
Turn-off delay time td(off) 400 ns VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω 3
Fall time tf 35 ns VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω 3
Gate to source charge Qgs 4 nC VDD=400 V, ID=3.3 A, VGS=0 to 10 V 3
Gate to drain charge Qgd 15 nC VDD=400 V, ID=3.3 A, VGS=0 to 10 V 3
Gate charge total Qg 34 nC VDD=400 V, ID=3.3 A, VGS=0 to 10 V 3
Gate plateau voltage Vplateau 4.6 V 3
Reverse recovery time trr 340 ns VR=400 V, IF=IS, diF/dt=100 A/µs 3
Reverse recovery charge Qrr 4.1 µC VR=400 V, IF=IS, diF/dt=100 A/µs 3
Peak reverse recovery current Irrm 21 A VR=400 V, IF=IS, diF/dt=100 A/µs 3

CAD (KiCad official)

  • Symbol: IPW90R1K0C3
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: ipw90r1k0c3-etched.step / ipw90r1k0c3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipw90r1k0c3.step / ipw90r1k0c3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 9605f98e3ff0d8b6, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF