# IPW90R1K0C3

**Infineon Technologies** · MOSFETs · TO-247

IPW90R1K0C3 from Infineon Technologies, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate pin (pin 1) of the MOSFET; static gate-source voltage limited to ±20 V and AC (f>1 Hz) to ±30 V, with a gate threshold of 2.5 to 3.5 V at ID=0.37 mA. |
| 2 | D | passive | Drain pin (pin 2) of the MOSFET, rated for VDS of 900 V at TJ=25 °C with continuous drain current of 5.7 A at TC=25 °C. |
| 3 | S | passive | Source pin (pin 3) of the MOSFET, carrying the continuous diode forward current of 3.3 A at TC=25 °C through the body diode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | 5.7 | A | TC=25 °C | 1 |
| Continuous drain current | ID |  |  | 3.6 | A | TC=100 °C | 1 |
| Pulsed drain current | ID,pulse |  |  | 12 | A | TC=25 °C | 1 |
| Avalanche energy, single pulse | EAS |  |  | 97 | mJ | ID=1.1 A, VDD=50 V | 1 |
| Avalanche energy, repetitive | EAR |  |  | 0.37 | mJ | ID=1.1 A, VDD=50 V | 1 |
| Avalanche current, repetitive | IAR |  |  | 1.1 | A |  | 1 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 50 | V/ns | VDS=0...400 V | 1 |
| Gate source voltage, static | VGS | -30 |  | 30 | V | static | 1 |
| Gate source voltage, AC | VGS | -20 |  | 20 | V | AC (f>1 Hz) | 1 |
| Power dissipation | Ptot |  |  | 89 | W | TC=25 °C | 1 |
| Operating and storage temperature | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Mounting torque | M |  |  | 60 | Ncm | M3 and M3.5 screws | 1 |
| Diode pulse current | IS,pulse |  |  | 13 | A |  | 2 |
| Reverse diode dv/dt | dv/dt |  |  | 4 | V/ns | ISD≤ID, di/dt≤200 A/µs, VDClink=400V | 2 |
| Thermal resistance, junction - case | RthJC |  |  | 1.4 | K/W |  | 2 |
| Thermal resistance, junction - ambient | RthJA |  |  | 62 | K/W | leaded | 2 |
| Soldering temperature, wavesoldering | Tsold |  |  | 260 | °C | 1.6 mm (0.063 in.) from case for 10 s; wave soldering only at leads | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 900 |  |  | V | VGS=0 V, ID=250 µA | 2 |
| Gate threshold voltage | VGS(th) | 2.5 | 3 | 3.5 | V | VDS=VGS, ID=0.37 mA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS=900 V, VGS=0 V, Tj=25 °C | 2 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=20 V, VDS=0 V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 0.78 | 1 | Ω | VGS=10 V, ID=3.3 A, Tj=25 °C | 2 |
| Reverse diode forward voltage | VSD |  | 0.8 | 1.2 | V | VGS=0 V, IF=3.3 A, Tj=25 °C | 3 |
| Zero gate voltage drain current | IDSS |  | 10 |  | µA | VDS=900 V, VGS=0 V, Tj=150 °C | 2 |
| Drain-source on-state resistance | RDS(on) |  | 2.1 |  | Ω | VGS=10 V, ID=3.3 A, Tj=150 °C | 2 |
| Gate resistance | RG |  | 1.3 |  | Ω | f=1 MHz, open drain | 2 |
| Input capacitance | Ciss |  | 850 |  | pF | VGS=0 V, VDS=100 V, f=1 MHz | 3 |
| Output capacitance | Coss |  | 42 |  | pF | VGS=0 V, VDS=100 V, f=1 MHz | 3 |
| Effective output capacitance, energy related | Co(er) |  | 28 |  | pF | VGS=0 V, VDS=0 V to 500 V | 3 |
| Effective output capacitance, time related | Co(tr) |  | 100 |  | pF | VGS=0 V, VDS=0 V to 500 V | 3 |
| Turn-on delay time | td(on) |  | 70 |  | ns | VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω | 3 |
| Rise time | tr |  | 20 |  | ns | VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω | 3 |
| Turn-off delay time | td(off) |  | 400 |  | ns | VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω | 3 |
| Fall time | tf |  | 35 |  | ns | VDD=400 V, VGS=10 V, ID=3.3 A, RG=62.4 Ω | 3 |
| Gate to source charge | Qgs |  | 4 |  | nC | VDD=400 V, ID=3.3 A, VGS=0 to 10 V | 3 |
| Gate to drain charge | Qgd |  | 15 |  | nC | VDD=400 V, ID=3.3 A, VGS=0 to 10 V | 3 |
| Gate charge total | Qg |  | 34 |  | nC | VDD=400 V, ID=3.3 A, VGS=0 to 10 V | 3 |
| Gate plateau voltage | Vplateau |  | 4.6 |  | V |  | 3 |
| Reverse recovery time | trr |  | 340 |  | ns | VR=400 V, IF=IS, diF/dt=100 A/µs | 3 |
| Reverse recovery charge | Qrr |  | 4.1 |  | µC | VR=400 V, IF=IS, diF/dt=100 A/µs | 3 |
| Peak reverse recovery current | Irrm |  | 21 |  | A | VR=400 V, IF=IS, diF/dt=100 A/µs | 3 |

## CAD (KiCad official)

- Symbol: `IPW90R1K0C3`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `ipw90r1k0c3-etched.step` / `ipw90r1k0c3-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ipw90r1k0c3.step` / `ipw90r1k0c3.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](docs/ipw90r1k0c3-datasheet.pdf) (11 pp, sha256 `9605f98e3ff0d8b6`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ipw90r1k0c3-datasheet.pdf)