component
AGM425M
Public Made by Adomby adom
AGM Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAGM425M
AGM Semi · MOSFETs · SOP-8
AGM425M from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1; pin 1 is at the marked corner of the SOP8 package. |
| 2 | G1 | input | Gate of MOSFET 1; the datasheet rates gate-source voltage at ±20 V for both channels. |
| 3 | S2 | passive | Source of MOSFET 2. |
| 4 | G2 | input | Gate of MOSFET 2; the datasheet rates gate-source voltage at ±20 V for both channels. |
| 5 | D2 | passive | Drain of MOSFET 2; the datasheet gives drain-source ratings of 40 V (N-Ch) and -40 V (P-Ch). |
| 6 | D2 | passive | Drain of MOSFET 2, tied to pin 5 in the package; the datasheet gives drain-source ratings of 40 V (N-Ch) and -40 V (P-Ch). |
| 7 | D1 | passive | Drain of MOSFET 1; the datasheet gives drain-source ratings of 40 V (N-Ch) and -40 V (P-Ch). |
| 8 | D1 | passive | Drain of MOSFET 1, tied to pin 7 in the package; the datasheet gives drain-source ratings of 40 V (N-Ch) and -40 V (P-Ch). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | 40 | V | VGS=0V | 1 | ||
| P-ch Drain-Source Voltage | VDS | -40 | V | VGS=0V | 1 | ||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| N-ch Drain Current-Continuous | ID | 6.6 | A | TA=25℃ (Note 1) | 1 | ||
| P-ch Drain Current-Continuous | ID | -5.5 | A | TA=25℃ (Note 1) | 1 | ||
| N-ch Drain Current-Continuous | ID | 5.2 | A | TA=100℃ | 1 | ||
| P-ch Drain Current-Continuous | ID | -3.3 | A | TA=100℃ | 1 | ||
| N-ch Drain Current-Pulsed | IDM | 26.4 | A | Note 2 | 1 | ||
| P-ch Drain Current-Pulsed | IDM | -22 | A | Note 2 | 1 | ||
| Total Power Dissipation | PD | 2.5 | W | TA=25℃ | 1 | ||
| Total Power Dissipation | PD | 1 | W | TA=100℃ | 1 | ||
| N-ch Avalanche energy | EAS | 36 | mJ | Note 3: TJ=25℃,VDD=25V,Vgs=10V,ID=12A,L=0.5mH,RG=25ohm | 1 | ||
| P-ch Avalanche energy | EAS | 30 | mJ | Note 3: TJ=25℃,VDD=-25V,Vgs=-10V,ID=-11A,L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State | 1 | ||
| N-ch Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| N-ch Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| N-ch Gate Threshold Voltage | VGS(th) | 1.2 | 1.5 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| N-ch Drain-Source On-State Resistance | RDS(on) | 18 | 28 | mΩ | VGS=10V, ID=5A | 2 | |
| N-ch Drain-Source On-State Resistance | RDS(on) | 30 | 43 | mΩ | VGS=4.5V, ID=4A | 2 | |
| N-ch Source-Drain Current (Body Diode) | ISD | 6.6 | A | 2 | |||
| N-ch Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=5A | 2 | ||
| P-ch Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V ID=-250μA | 3 | ||
| P-ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-40V,VGS=0V | 3 | ||
| P-ch Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 3 | |
| P-ch Gate Threshold Voltage | VGS(th) | -1.2 | -1.5 | -2.2 | V | VDS=VGS,ID=-250μA | 3 |
| P-ch Drain-Source On-State Resistance | RDS(on) | 50 | 70 | mΩ | VGS=-10V, ID=-5A | 3 | |
| P-ch Drain-Source On-State Resistance | RDS(on) | 65 | 85 | mΩ | VGS=-4.5V, ID=-4A | 3 | |
| P-ch Source-Drain Current (Body Diode) | ISD | -5.5 | A | 3 | |||
| P-ch Forward on Voltage | VSD | -1.2 | V | VGS=0V,IS=-5A | 3 |
CAD (KiCad official)
- Symbol:
AGM425M - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm425m-etched.step/agm425m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm425m.step/agm425m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM Semi datasheet (11 pp, sha256
a744112aa9f0688d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).