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AGM425M

AGM Semi · MOSFETs · SOP-8

AGM425M from AGM Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1; pin 1 is at the marked corner of the SOP8 package.
2 G1 input Gate of MOSFET 1; the datasheet rates gate-source voltage at ±20 V for both channels.
3 S2 passive Source of MOSFET 2.
4 G2 input Gate of MOSFET 2; the datasheet rates gate-source voltage at ±20 V for both channels.
5 D2 passive Drain of MOSFET 2; the datasheet gives drain-source ratings of 40 V (N-Ch) and -40 V (P-Ch).
6 D2 passive Drain of MOSFET 2, tied to pin 5 in the package; the datasheet gives drain-source ratings of 40 V (N-Ch) and -40 V (P-Ch).
7 D1 passive Drain of MOSFET 1; the datasheet gives drain-source ratings of 40 V (N-Ch) and -40 V (P-Ch).
8 D1 passive Drain of MOSFET 1, tied to pin 7 in the package; the datasheet gives drain-source ratings of 40 V (N-Ch) and -40 V (P-Ch).

Key specifications

Parameter Value
Manufacturer AGM Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-ch Drain-Source Voltage VDS 40 V VGS=0V 1
P-ch Drain-Source Voltage VDS -40 V VGS=0V 1
N-ch Gate-Source Voltage VGS -20 20 V VDS=0V 1
P-ch Gate-Source Voltage VGS -20 20 V VDS=0V 1
N-ch Drain Current-Continuous ID 6.6 A TA=25℃ (Note 1) 1
P-ch Drain Current-Continuous ID -5.5 A TA=25℃ (Note 1) 1
N-ch Drain Current-Continuous ID 5.2 A TA=100℃ 1
P-ch Drain Current-Continuous ID -3.3 A TA=100℃ 1
N-ch Drain Current-Pulsed IDM 26.4 A Note 2 1
P-ch Drain Current-Pulsed IDM -22 A Note 2 1
Total Power Dissipation PD 2.5 W TA=25℃ 1
Total Power Dissipation PD 1 W TA=100℃ 1
N-ch Avalanche energy EAS 36 mJ Note 3: TJ=25℃,VDD=25V,Vgs=10V,ID=12A,L=0.5mH,RG=25ohm 1
P-ch Avalanche energy EAS 30 mJ Note 3: TJ=25℃,VDD=-25V,Vgs=-10V,ID=-11A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
N-ch Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V ID=250μA 2
N-ch Zero Gate Voltage Drain Current IDSS 1 μA VDS=40V,VGS=0V 2
N-ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
N-ch Gate Threshold Voltage VGS(th) 1.2 1.5 2.2 V VDS=VGS,ID=250μA 2
N-ch Drain-Source On-State Resistance RDS(on) 18 28 mΩ VGS=10V, ID=5A 2
N-ch Drain-Source On-State Resistance RDS(on) 30 43 mΩ VGS=4.5V, ID=4A 2
N-ch Source-Drain Current (Body Diode) ISD 6.6 A 2
N-ch Forward on Voltage VSD 1.2 V VGS=0V,IS=5A 2
P-ch Drain-Source Breakdown Voltage BVDSS -40 V VGS=0V ID=-250μA 3
P-ch Zero Gate Voltage Drain Current IDSS -1 μA VDS=-40V,VGS=0V 3
P-ch Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 3
P-ch Gate Threshold Voltage VGS(th) -1.2 -1.5 -2.2 V VDS=VGS,ID=-250μA 3
P-ch Drain-Source On-State Resistance RDS(on) 50 70 mΩ VGS=-10V, ID=-5A 3
P-ch Drain-Source On-State Resistance RDS(on) 65 85 mΩ VGS=-4.5V, ID=-4A 3
P-ch Source-Drain Current (Body Diode) ISD -5.5 A 3
P-ch Forward on Voltage VSD -1.2 V VGS=0V,IS=-5A 3

CAD (KiCad official)

  • Symbol: AGM425M
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm425m-etched.step / agm425m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm425m.step / agm425m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM Semi datasheet (11 pp, sha256 a744112aa9f0688d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF