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SQD50P03-07-HXY

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HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorssqd50p03-07-hxyfactory-2.0.0extractor-text

Verified SQD50P03-07-HXY

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: SQD50P03-07-HXY · TO-252-2L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 6-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-ee6i4t2d/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.5)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ sqd50p03-07-hxy.kicad_sym✓ sqd50p03-07-hxy.kicad_mod✓ sqd50p03-07-hxy.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

SQD50P03-07-HXY

HXY MOSFET · MOSFETs · TO-252-2L

SQD50P03-07-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold -1.2 to -2.5 V at ID=-250 µA, with full enhancement specified at VGS=-10 V and -4.5 V.
2 D passive Drain, connected to the exposed metal tab (center lead is omitted in the 2L package); drain-source voltage -30 V and continuous current -70 A at TC=25℃.
3 S passive Source; continuous source current of -70 A, with the body diode forward voltage at most -1.2 V at IS=-1 A.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package TO-252-2L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID@TC=25℃ -70 A VGS @ -10V 1
Continuous Drain Current ID@TC=100℃ -50 A VGS @ -10V 1
Pulsed Drain Current IDM -200 A TC=25℃ 1
Single Pulse Avalanche Energy EAS 80 mJ VDD=-50V,VGS=-10V,L=0.1mH,IAS=-40A 1
Avalanche Current IAS -40 A TC=25℃ 1
Total Power Dissipation PD@TC=25℃ 90 W 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1
Thermal Resistance Junction-ambient RθJA 20 ℃/W t≦10S 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Thermal Resistance Junction-case RθJC 1.6 ℃/W 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V , ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 7 10 mΩ VGS=-10V , ID=-20A 2
Static Drain-Source On-Resistance RDS(ON) 11 18 mΩ VGS=-4.5V , ID=-15A 2
Gate Threshold Voltage VGS(th) -1.2 -2.5 V VGS=VDS , ID =-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-24V , VGS=0V , TJ=25℃ 2
Drain-Source Leakage Current IDSS -5 uA VDS=-24V , VGS=0V , TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V , VDS=0V 2
Continuous Source Current IS -70 A VG=VD=0V , Force Current 2
Diode Forward Voltage VSD -1.2 V VGS=0V , IS=-1A , TJ=25℃ 2
Gate Resistance Rg 1.2 Ω VDS=0V , VGS=0V , f=1MHz 2
Total Gate Charge (-10V) Qg 60 nC VDS=-15V , VGS=-10V , ID=-18A 2
Gate-Source Charge Qgs 9 nC VDS=-15V , VGS=-10V , ID=-18A 2
Gate-Drain Charge Qgd 15 nC VDS=-15V , VGS=-10V , ID=-18A 2
Turn-On Delay Time Td(on) 17 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-20A 2
Rise Time Tr 40 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-20A 2
Turn-Off Delay Time Td(off) 55 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-20A 2
Fall Time Tf 13 ns VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-20A 2
Input Capacitance Ciss 3450 pF VDS=-25V , VGS=0V , f=1MHz 2
Output Capacitance Coss 255 pF VDS=-25V , VGS=0V , f=1MHz 2
Reverse Transfer Capacitance Crss 140 pF VDS=-25V , VGS=0V , f=1MHz 2
Reverse Recovery Time trr 22 nS IF=-20A , di/dt=100A/µs , TJ=25℃ 2
Reverse Recovery Charge Qrr 72 nC IF=-20A , di/dt=100A/µs , TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SQD50P03-07-HXY
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2L (KiCad packages3D, STEP)
  • 3D model files: sqd50p03-07-hxy-etched.step / sqd50p03-07-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sqd50p03-07-hxy.step / sqd50p03-07-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 6ac3ece468cc90e4, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF