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SQD50P03-07-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSQD50P03-07-HXY
HXY MOSFET · MOSFETs · TO-252-2L
SQD50P03-07-HXY from HXY MOSFET, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold -1.2 to -2.5 V at ID=-250 µA, with full enhancement specified at VGS=-10 V and -4.5 V. |
| 2 | D | passive | Drain, connected to the exposed metal tab (center lead is omitted in the 2L package); drain-source voltage -30 V and continuous current -70 A at TC=25℃. |
| 3 | S | passive | Source; continuous source current of -70 A, with the body diode forward voltage at most -1.2 V at IS=-1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID@TC=25℃ | -70 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -50 | A | VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -200 | A | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | VDD=-50V,VGS=-10V,L=0.1mH,IAS=-40A | 1 | ||
| Avalanche Current | IAS | -40 | A | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 90 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 20 | ℃/W | t≦10S | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-case | RθJC | 1.6 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V , ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 10 | mΩ | VGS=-10V , ID=-20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11 | 18 | mΩ | VGS=-4.5V , ID=-15A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -2.5 | V | VGS=VDS , ID =-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V , VGS=0V , TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -5 | uA | VDS=-24V , VGS=0V , TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V , VDS=0V | 2 | |
| Continuous Source Current | IS | -70 | A | VG=VD=0V , Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V , IS=-1A , TJ=25℃ | 2 | ||
| Gate Resistance | Rg | 1.2 | Ω | VDS=0V , VGS=0V , f=1MHz | 2 | ||
| Total Gate Charge (-10V) | Qg | 60 | nC | VDS=-15V , VGS=-10V , ID=-18A | 2 | ||
| Gate-Source Charge | Qgs | 9 | nC | VDS=-15V , VGS=-10V , ID=-18A | 2 | ||
| Gate-Drain Charge | Qgd | 15 | nC | VDS=-15V , VGS=-10V , ID=-18A | 2 | ||
| Turn-On Delay Time | Td(on) | 17 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-20A | 2 | ||
| Rise Time | Tr | 40 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-20A | 2 | ||
| Turn-Off Delay Time | Td(off) | 55 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-20A | 2 | ||
| Fall Time | Tf | 13 | ns | VDD=-15V, VGS=-10V, RG=3.3Ω, ID=-20A | 2 | ||
| Input Capacitance | Ciss | 3450 | pF | VDS=-25V , VGS=0V , f=1MHz | 2 | ||
| Output Capacitance | Coss | 255 | pF | VDS=-25V , VGS=0V , f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 140 | pF | VDS=-25V , VGS=0V , f=1MHz | 2 | ||
| Reverse Recovery Time | trr | 22 | nS | IF=-20A , di/dt=100A/µs , TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 72 | nC | IF=-20A , di/dt=100A/µs , TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
SQD50P03-07-HXY - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
sqd50p03-07-hxy-etched.step/sqd50p03-07-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sqd50p03-07-hxy.step/sqd50p03-07-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
6ac3ece468cc90e4, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).