component
MOT8N65MD
Public Made by Adomby adom
MOT MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMOT8N65MD
MOT · MOSFETs · TO-252
MOT8N65MD from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±30 V (VGSS) per the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is rated 650 V (VDSS) with 8 A continuous drain current at TC = 25°C. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, the reference for the gate-source voltage rated ±30 V (VGSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Drain Current Continuous | ID | 8 | A | 1 | |||
| Drain Current Pulsed | IDM | 32 | A | 1 | |||
| Avalanche Current (Repetitive) | IAR | 8 | A | 1 | |||
| Avalanche Energy Single Pulsed | EAS | 230 | mJ | 1 | |||
| Avalanche Energy Repetitive | EAR | 14.7 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | 1 | |||
| Power Dissipation | PD | 55 | W | 1 | |||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Operating Temperature | TOPR | -55 | 150 | °C | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance Junction-to-Case | θJC | 0.85 | °C/W | Transient thermal response curve note: θJC(t) = 0.85°C/W Max. | 6 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | µA | VDS = 650 V, VGS = 0 V | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30 V, VDS = 0 V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30 V, VDS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 1.2 | 1.3 | Ω | VGS = 10 V, ID = 4A | 2 | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, IS = 8A | 2 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 8 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 32 | A | 2 |
CAD (KiCad official)
- Symbol:
MOT8N65MD - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot8n65md-etched.step/mot8n65md-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot8n65md.step/mot8n65md.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (8 pp, sha256
7801ca9dc2094cc5, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).