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MOT8N65MD

MOT · MOSFETs · TO-252

MOT8N65MD from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-source voltage is rated ±30 V (VGSS) per the absolute maximum ratings.
2 Drain passive Drain terminal of the N-channel MOSFET; drain-source voltage is rated 650 V (VDSS) with 8 A continuous drain current at TC = 25°C.
3 Source passive Source terminal of the N-channel MOSFET, the reference for the gate-source voltage rated ±30 V (VGSS).

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V 1
Gate-Source Voltage VGSS -30 30 V 1
Drain Current Continuous ID 8 A 1
Drain Current Pulsed IDM 32 A 1
Avalanche Current (Repetitive) IAR 8 A 1
Avalanche Energy Single Pulsed EAS 230 mJ 1
Avalanche Energy Repetitive EAR 14.7 mJ 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns 1
Power Dissipation PD 55 W 1
Junction Temperature TJ 150 °C 1
Operating Temperature TOPR -55 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Thermal Resistance Junction-to-Case θJC 0.85 °C/W Transient thermal response curve note: θJC(t) = 0.85°C/W Max. 6
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0 V, ID = 250 μA 2
Drain-Source Leakage Current IDSS 10 µA VDS = 650 V, VGS = 0 V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30 V, VDS = 0 V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30 V, VDS = 0 V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250 μA 2
Static Drain-Source On-State Resistance RDS(ON) 1.2 1.3 Ω VGS = 10 V, ID = 4A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, IS = 8A 2
Maximum Continuous Drain-Source Diode Forward Current IS 8 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 32 A 2

CAD (KiCad official)

  • Symbol: MOT8N65MD
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot8n65md-etched.step / mot8n65md-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot8n65md.step / mot8n65md.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (8 pp, sha256 7801ca9dc2094cc5, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF