component
H2SC3357-RE
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownH2SC3357-RE
HXY MOSFET · Bipolar (BJT) · SOT-89
H2SC3357-RE from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet rates emitter-base voltage VEBO at 3 V maximum and gives VBE(sat) of 1.2 V at IC=50 mA, IB=5 mA. |
| 2 | COLLECTOR | passive | Collector terminal; the datasheet rates VCBO at 20 V, VCEO at 12 V, continuous collector current at 100 mA, and total power dissipation PC at 1.2 W. |
| 3 | EMITTER | passive | Emitter terminal; the datasheet rates the junction and storage temperature range at -55 to +150 ℃ and gives the emitter-base breakdown voltage V(BR)EBO as 5 V minimum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 12 | V | Ta=25 (maximum ratings header) | 1 | ||
| Collector-Base Voltage | VCBO | 20 | V | Ta=25 (maximum ratings header) | 1 | ||
| Emitter-Base Voltage | VEBO | 3 | V | Ta=25 (maximum ratings header) | 1 | ||
| Collector Current -Continuous | IC | 100 | mA | Ta=25 (maximum ratings header) | 1 | ||
| Collector Power Dissipation | PC | 1.2 | W | Ta=25 (maximum ratings header) | 1 | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | Ta=25 (maximum ratings header) | 1 | |
| Collector-base breakdown voltage | V(BR)CBO | 20 | V | IC=100μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 12 | V | IC=1mA, IB=0 (pulse test) | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 1 | μA | VCB=20V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 1 | μA | VEB=1V, IC=0 | 1 | ||
| DC current gain | hFE | 50 | VCE=10V, IC=20mA | 1 | |||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=50mA, IB=5mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.4 | V | IC=50mA, IB=5mA | 1 | ||
| Transition frequency | fT | 6.5 | GHz | VCE=10V, IC=20mA | 1 | ||
| Thermal resistance, junction to ambient | Rth(j-a) | 312.5 | ˚C/W | Ceramic substrate 16 cm2 × 0.7 mm (t), free air | 2 |
CAD (KiCad official)
- Symbol:
H2SC3357-RE - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
h2sc3357-re-etched.step/h2sc3357-re-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);h2sc3357-re.step/h2sc3357-re.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
f567729f4ceb3375, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).