component
LMR51410YFDBVR
Public Made by Adomby adom
Texas Instruments Global Sourcing Parts, SOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownLMR51410YFDBVR
Texas Instruments · Global Sourcing Parts · SOT-23-6
LMR51410YFDBVR from Texas Instruments, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CB | power_out | Bootstrap capacitor connection for the high-side FET gate driver; connect a 100nF quality capacitor between CB and SW, rated 16V or higher with X7R or X5R dielectric. |
| 2 | GND | power_in | Power ground, internally connected to the low-side FET source; connect to system ground and the ground side of CIN and COUT, keeping the connection to CIN as short as possible. |
| 3 | FB | input | Converter feedback input; connect a resistor divider to set the output voltage, and do not short this pin to ground during operation. |
| 4 | EN | input | Precision enable input that must not be left floating: high turns the converter on and low turns it off, it may be tied to VIN, its voltage must not exceed VIN + 0.3V, and an external divider can set an adjustable UVLO. |
| 5 | VIN | power_in | Supply input for the internal bias LDO and high-side FET, operating from 4V to 42V, with the input bypass capacitor connected directly between this pin and GND. |
| 6 | SW | power_out | Converter switch output, internally connected to the high-side FET source and low-side FET drain, which drives the power inductor. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23-6 |
| Category | Global Sourcing Parts |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage VIN to GND | VIN | -0.3 | 45 | V | 4 | ||
| Input voltage EN to GND | EN | -0.3 | V | max printed as VIN + 0.3 | 4 | ||
| Input voltage FB to GND | FB | -0.3 | 5.5 | V | 4 | ||
| Output voltage SW to GND | SW | -0.3 | 45 | V | 4 | ||
| Output voltage SW to GND (transient) | SW | -5 | 50 | V | transient less than 10ns | 4 | |
| Output voltage CBOOT to SW | CBOOT | -0.3 | 5.5 | V | 4 | ||
| Junction temperature | TJ | -40 | 150 | °C | 4 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 4 | ||
| Input voltage VIN to GND (operating) | VIN | 4 | 42 | V | 4 | ||
| Input voltage EN (operating) | EN | 0 | V | max printed as VIN | 4 | ||
| Input voltage FB (operating) | FB | 0 | 4.5 | V | 4 | ||
| Output voltage VOUT (operating) | VOUT | 0.8 | 28 | V | 4 | ||
| Output current Iout (LMR51410) | Iout | 1 | A | LMR51410; derating at high fSW or ambient per footnote 3 | 4 | ||
| Operating junction temperature | TJ | -40 | 150 | °C | 4 | ||
| VIN quiescent current, FPWM operation | IQ(VIN) | 420 | µA | VEN = 3V, FPWM operation | 5 | ||
| VIN shutdown supply current | ISD(VIN) | 0.8 | 3 | µA | VEN = 0V | 5 | |
| VIN UVLO rising threshold | VIN_UVLO(R) | 3.82 | 4 | V | VIN rising | 5 | |
| VIN UVLO falling threshold | VIN_UVLO(F) | 3.4 | 3.56 | V | VIN falling | 5 | |
| EN voltage rising threshold | VEN(R) | 1.1 | 1.227 | 1.36 | V | EN rising, enables switching | 5 |
| EN voltage falling threshold | VEN(F) | 0.85 | 1 | 1.15 | V | EN falling, disables switching | 5 |
| EN pin pull current | IEN(P2) | 10 | 50 | nA | VEN = 3V | 5 | |
| Voltage reference | VFB | 0.788 | 0.8 | 0.812 | V | 5 | |
| FB input leakage current | IFB(LKG) | 0.2 | nA | VFB = 0.8V | 5 | ||
| Switching frequency, CCM operation, Y version | fSW(CCM) | 0.935 | 1.1 | 1.265 | MHz | CCM operation, Y version | 5 |
| Maximum ON pulse width | tON_MAX | 5 | µs | VIN = 12V, IOUT = 0.5A | 5 | ||
| High-side peak current limit, LMR51410 | IHS_PK(OC) | 1.25 | 1.6 | 1.95 | A | LMR51410 | 6 |
| Low-side valley current limit, LMR51410 | ILS_V(OC) | 0.9 | 1.1 | 1.3 | A | LMR51410 | 6 |
| VIN operating input voltage range | VIN | 4 | 42 | V | 6 | ||
| Maximum switch duty cycle | DMAX | 98 | % | 6 | |||
| VIN UVLO hysteresis | VIN_UVLO(H) | 0.25 | V | 5 | |||
| High-side MOSFET on-resistance | RDSON(HS) | 0.7 | Ω | VIN = 12V, TJ = 25°C | 5 | ||
| Low-side MOSFET on-resistance | RDSON(LS) | 0.36 | Ω | VIN = 12V, TJ = 25°C | 5 | ||
| Minimum ON pulse width | tON_MIN | 80 | ns | VIN = 12V, IOUT = 0.1A | 5 | ||
| Minimum OFF pulse width | tOFF_MIN | 200 | ns | VIN = 5V | 5 | ||
| Low-side negative current limit, LMR51410 FPWM only | ILS(NOC) | -0.66 | A | LMR51410, FPWM only | 6 | ||
| Zero-crossing detection current threshold | IZC | 0 | A | 6 | |||
| Thermal shutdown threshold | TJ(SD) | 165 | °C | junction temperature rising | 6 | ||
| Thermal shutdown hysteresis | TJ(HYS) | 20 | °C | 6 | |||
| Internal fixed soft-start time | tSS | 2.3 | ms | 5 | |||
| FB voltage triggering short-circuit hiccup | VHC | 0.32 | V | 6 | |||
| Time between current-limit hiccup bursts | THICCUP | 150 | ms | 6 | |||
| Junction-to-ambient thermal resistance | RθJA | 147.8 | °C/W | DBV (SOT-23-6), JESD 51-7 4-layer board, simulated | 5 | ||
| Junction-to-ambient thermal resistance (effective) | RθJA(Effective) | 95 | °C/W | EVM board | 5 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 71.1 | °C/W | DBV (SOT-23-6) | 5 | ||
| Junction-to-board thermal resistance | RθJB | 36.6 | °C/W | DBV (SOT-23-6) | 5 | ||
| Junction-to-top characterization parameter | ψJT | 14.2 | °C/W | DBV (SOT-23-6) | 5 | ||
| Junction-to-board characterization parameter | ψJB | 36.4 | °C/W | DBV (SOT-23-6) | 5 |
CAD (KiCad official)
- Symbol:
LMR51410YFDBVR - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
lmr51410yfdbvr-etched.step/lmr51410yfdbvr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);lmr51410yfdbvr.step/lmr51410yfdbvr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (30 pp, sha256
c9e4cc6df5596e11, retrieved 2026-10-18, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).