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AGM1099S

Public Made by Adom

by adom

AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsagm1099sfactory-2.0.0extractor-text

Verified AGM1099S

by Ray · last 31 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

31 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AGM1099S · SOP-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-6x9p0he_/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ agm1099s.kicad_sym✓ agm1099s.kicad_mod✓ agm1099s.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

AGM1099S

AGM-Semi · MOSFETs · SOP-8

AGM1099S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied to the body diode anode and to pins 2 and 3.
2 S passive Source of the N-channel MOSFET, tied to the body diode anode and to pins 1 and 3.
3 S passive Source of the N-channel MOSFET, tied to the body diode anode and to pins 1 and 2.
4 G input Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V.
5 D passive Drain of the N-channel MOSFET, rated at 100 V maximum drain-source voltage and tied to pins 6, 7 and 8.
6 D passive Drain of the N-channel MOSFET, rated at 100 V maximum drain-source voltage and tied to pins 5, 7 and 8.
7 D passive Drain of the N-channel MOSFET, rated at 100 V maximum drain-source voltage and tied to pins 5, 6 and 8.
8 D passive Drain of the N-channel MOSFET, rated at 100 V maximum drain-source voltage and tied to pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer AGM-Semi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.2 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(on) 100 110 mΩ VGS=10V, ID=6A 2
Drain-Source On-State Resistance RDS(on) 110 140 mΩ VGS=4.5V, ID=5A 2
Source-Drain Current (Body Diode) ISD 7 A 2
Forward on Voltage VSD 1.2 V VGS=0V,IS=10A 2
Drain-Source Voltage VDS 100 V VGS=0V, TA=25℃ 1
Gate-Source Voltage VGS -20 20 V VDS=0V 1
Drain Current-Continuous ID 7 A TA=25℃ 1
Drain Current-Continuous ID 4.5 A TA=100℃ 1
Drain Current-Pulsed IDM 8 A TA=25℃ 1
Maximum Power Dissipation PD 2.5 w TA=25℃ 1
Maximum Power Dissipation PD 1 w TA=100℃ 1
Avalanche energy EAS 49 mJ TJ=25℃,VDD=50V,Vgs=10V ID=14A,L=0.5mH,RG=25ohm 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 50 ℃/W Steady State 1
Forward Transconductance gFS 7 S VDS=5V,ID=5A 2
Input Capacitance Ciss 182 pF VDS=50V,VGS=0V, F=1MHZ 2
Output Capacitance Coss 30 pF VDS=50V,VGS=0V, F=1MHZ 2
Reverse Transfer Capacitance Crss 3.6 pF VDS=50V,VGS=0V, F=1MHZ 2
Gate resistance Rg 2.5 Ω VGS=0V, VDS=0V,f=1.0MHz 2
Turn-on Delay Time td(on) 11 nS VGS=10V,VDS=50V, ID=5A,RGEN=5Ω 2
Turn-on Rise Time tr 6 nS VGS=10V,VDS=50V, ID=5A,RGEN=5Ω 2
Turn-Off Delay Time td(off) 30 nS VGS=10V,VDS=50V, ID=5A,RGEN=5Ω 2
Turn-Off Fall Time tf 4 nS VGS=10V,VDS=50V, ID=5A,RGEN=5Ω 2
Total Gate Charge Qg 3.57 nC VGS=10V, VDS=50V, ID=5A 2
Gate-Source Charge Qgs 0.76 nC VGS=10V, VDS=50V, ID=5A 2
Gate-Drain Charge Qgd 0.71 nC VGS=10V, VDS=50V, ID=5A 2
Reverse Recovery Time trr 50 ns IF=10A , dI/dt=100A/µs ,TJ=25℃ 2
Reverse Recovery Charge Qrr 102 nc IF=10A , dI/dt=100A/µs ,TJ=25℃ 2

CAD (KiCad official)

  • Symbol: AGM1099S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: agm1099s-etched.step / agm1099s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); agm1099s.step / agm1099s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: AGM-Semi datasheet (9 pp, sha256 6d49951142042451, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF