component
AGM1099S
Public Made by Adomby adom
AGM-Semi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
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| docs | 3d ago |
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| agm1099s-etched.glb | 3d ago |
| agm1099s-etched.step | 3d ago |
| agm1099s-hero.glb | 3d ago |
| agm1099s-hero.overlay.json | 3d ago |
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AGM1099S
AGM-Semi · MOSFETs · SOP-8
AGM1099S from AGM-Semi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to the body diode anode and to pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the body diode anode and to pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the body diode anode and to pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated at 100 V maximum drain-source voltage and tied to pins 6, 7 and 8. |
| 6 | D | passive | Drain of the N-channel MOSFET, rated at 100 V maximum drain-source voltage and tied to pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET, rated at 100 V maximum drain-source voltage and tied to pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET, rated at 100 V maximum drain-source voltage and tied to pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.8 | 2.2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 100 | 110 | mΩ | VGS=10V, ID=6A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 110 | 140 | mΩ | VGS=4.5V, ID=5A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 7 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=10A | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | VGS=0V, TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V | 1 | |
| Drain Current-Continuous | ID | 7 | A | TA=25℃ | 1 | ||
| Drain Current-Continuous | ID | 4.5 | A | TA=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 8 | A | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 2.5 | w | TA=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1 | w | TA=100℃ | 1 | ||
| Avalanche energy | EAS | 49 | mJ | TJ=25℃,VDD=50V,Vgs=10V ID=14A,L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 50 | ℃/W | Steady State | 1 | ||
| Forward Transconductance | gFS | 7 | S | VDS=5V,ID=5A | 2 | ||
| Input Capacitance | Ciss | 182 | pF | VDS=50V,VGS=0V, F=1MHZ | 2 | ||
| Output Capacitance | Coss | 30 | pF | VDS=50V,VGS=0V, F=1MHZ | 2 | ||
| Reverse Transfer Capacitance | Crss | 3.6 | pF | VDS=50V,VGS=0V, F=1MHZ | 2 | ||
| Gate resistance | Rg | 2.5 | Ω | VGS=0V, VDS=0V,f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 11 | nS | VGS=10V,VDS=50V, ID=5A,RGEN=5Ω | 2 | ||
| Turn-on Rise Time | tr | 6 | nS | VGS=10V,VDS=50V, ID=5A,RGEN=5Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 30 | nS | VGS=10V,VDS=50V, ID=5A,RGEN=5Ω | 2 | ||
| Turn-Off Fall Time | tf | 4 | nS | VGS=10V,VDS=50V, ID=5A,RGEN=5Ω | 2 | ||
| Total Gate Charge | Qg | 3.57 | nC | VGS=10V, VDS=50V, ID=5A | 2 | ||
| Gate-Source Charge | Qgs | 0.76 | nC | VGS=10V, VDS=50V, ID=5A | 2 | ||
| Gate-Drain Charge | Qgd | 0.71 | nC | VGS=10V, VDS=50V, ID=5A | 2 | ||
| Reverse Recovery Time | trr | 50 | ns | IF=10A , dI/dt=100A/µs ,TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 102 | nc | IF=10A , dI/dt=100A/µs ,TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
AGM1099S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
agm1099s-etched.step/agm1099s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agm1099s.step/agm1099s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (9 pp, sha256
6d49951142042451, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).