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SP010N02BGHTD

Public Made by Adom

by adom

Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SP010N02BGHTD

Siliup · MOSFETs · TO-263

SP010N02BGHTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET, rated for a gate-source voltage VGS of ±20 V, with threshold VGS(th) of 2.7 V min to 4.3 V max at VGS=VDS, ID=250 µA.
2 D passive Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 100 V and a continuous drain current ID of 220 A at Tc=25℃.
3 S passive Source terminal of the MOSFET, the reference for VGS and the body diode, with a source-drain forward voltage VSD of 1.2 V max at IS=1 A, VGS=0 V.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 2
Drain Cut-Off Current IDSS 1 μA VDS=80V, VGS=0V, TJ=25℃ 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2.7 3.2 4.3 V VGS=VDS, ID=250uA 2
Drain-Source ON Resistance RDS(ON) 2.1 2.7 mΩ VGS=10V, ID=20A 2
Source-Drain Diode Forward Voltage VSD 1.2 V IS = 1A, VGS = 0V 2
Maximum Body-Diode Continuous Current IS 220 A 2
Drain-Source Voltage VDS 100 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 220 A Tc=25℃ 2
Continuous Drain Current ID 150 A Tc=100℃ 2
Pulsed Drain Current IDM 880 A 2
Single Pulse Avalanche Energy EAS 1458 mJ Single pulse; note 1: VDD=50V, VGS=10V, L=0.5mH, RG=25Ω 2
Power Dissipation PD 240 W Tc=25℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-to-Case RθJC 0.52 ℃/W 2

CAD (KiCad official)

  • Symbol: SP010N02BGHTD
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: sp010n02bghtd-etched.step / sp010n02bghtd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp010n02bghtd.step / sp010n02bghtd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (5 pp, sha256 22d5ceb3468bed4f, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF