component
SP010N02BGHTD
Public Made by Adomby adom
Siliup MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
| sp010n02bghtd-etched.glb | 13d ago |
| sp010n02bghtd-etched.step | 13d ago |
| sp010n02bghtd-hero.glb | 13d ago |
| sp010n02bghtd-hero.overlay.json | 13d ago |
| sp010n02bghtd.glb | 13d ago |
| sp010n02bghtd.kicad_mod | 13d ago |
| sp010n02bghtd.kicad_sym | 13d ago |
| sp010n02bghtd.lbr | 13d ago |
| sp010n02bghtd.step | 13d ago |
SP010N02BGHTD
Siliup · MOSFETs · TO-263
SP010N02BGHTD from Siliup, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET, rated for a gate-source voltage VGS of ±20 V, with threshold VGS(th) of 2.7 V min to 4.3 V max at VGS=VDS, ID=250 µA. |
| 2 | D | passive | Drain terminal of the MOSFET, rated for a drain-source voltage VDS of 100 V and a continuous drain current ID of 220 A at Tc=25℃. |
| 3 | S | passive | Source terminal of the MOSFET, the reference for VGS and the body diode, with a source-drain forward voltage VSD of 1.2 V max at IS=1 A, VGS=0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Siliup |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 2 | ||
| Drain Cut-Off Current | IDSS | 1 | μA | VDS=80V, VGS=0V, TJ=25℃ | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.7 | 3.2 | 4.3 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source ON Resistance | RDS(ON) | 2.1 | 2.7 | mΩ | VGS=10V, ID=20A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 220 | A | 2 | |||
| Drain-Source Voltage | VDS | 100 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 220 | A | Tc=25℃ | 2 | ||
| Continuous Drain Current | ID | 150 | A | Tc=100℃ | 2 | ||
| Pulsed Drain Current | IDM | 880 | A | 2 | |||
| Single Pulse Avalanche Energy | EAS | 1458 | mJ | Single pulse; note 1: VDD=50V, VGS=10V, L=0.5mH, RG=25Ω | 2 | ||
| Power Dissipation | PD | 240 | W | Tc=25℃ | 2 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 2 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 2 | ||
| Thermal Resistance Junction-to-Case | RθJC | 0.52 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
SP010N02BGHTD - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
sp010n02bghtd-etched.step/sp010n02bghtd-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sp010n02bghtd.step/sp010n02bghtd.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Siliup datasheet (5 pp, sha256
22d5ceb3468bed4f, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).