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IXGP48N60A3
Public Made by Adomby adom
Littelfuse/IXYS IGBTs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIXGP48N60A3
Littelfuse/IXYS · IGBTs · TO-220
IXGP48N60A3 from Littelfuse/IXYS, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the datasheet rates VGES at ±20V continuous and VGEM at ±30V transient, with VGE(th) of 3.0 to 5.5V. |
| 2 | C | passive | Collector terminal, also connected to the mounting tab; rated VCES 600V with IC25 of 120A at TC = 25°C. |
| 3 | E | passive | Emitter terminal, the reference for gate drive and collector-emitter voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse/IXYS |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | BVCES | 600 | V | IC = 250μA, VGE = 0V | 1 | ||
| Gate-emitter threshold voltage | VGE(th) | 3 | 5.5 | V | IC = 250μA, VCE = VGE | 1 | |
| Collector cut-off current | ICES | 25 | μA | VCE = VCES, VGE = 0V | 1 | ||
| Collector cut-off current | ICES | 250 | μA | TJ = 125°C | 1 | ||
| Gate-emitter leakage current | IGES | -100 | 100 | nA | VCE = 0V, VGE = ±20V | 1 | |
| Collector-emitter saturation voltage | VCE(sat) | 1.18 | 1.35 | V | IC = 32A, VGE = 15V, Note 1 | 1 | |
| Forward transconductance | gfs | 30 | 48 | S | IC = 32A, VCE = 10V, Note 1 | 2 | |
| Collector-emitter voltage | VCES | 600 | V | TJ = 25°C to 150°C | 1 | ||
| Collector-gate voltage | VCGR | 600 | V | TJ = 25°C to 150°C, RGE = 1MΩ | 1 | ||
| Gate-emitter voltage, continuous | VGES | -20 | 20 | V | Continuous | 1 | |
| Gate-emitter voltage, transient | VGEM | -30 | 30 | V | Transient | 1 | |
| Collector current, continuous | IC25 | 120 | A | TC = 25°C | 1 | ||
| Collector current, continuous | IC110 | 48 | A | TC = 110°C | 1 | ||
| Collector current, pulsed | ICM | 300 | A | TC = 25°C, 1ms | 1 | ||
| Reverse-bias safe operating area current | SSOA (RBSOA) | 96 | A | VGE = 15V, TVJ = 125°C, RG = 5Ω, Clamped Inductive Load, VCE ≤ VCES | 1 | ||
| Total power dissipation | PC | 300 | W | TC = 25°C | 1 | ||
| Operating junction temperature | TJ | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | TJM | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1 | |||
| Solder temperature | TSOLD | 260 | °C | 1.6 mm (0.062in.) from case for 10s | 1 | ||
| Thermal resistance, junction to case | RthJC | 0.42 | °C/W | 2 | |||
| Thermal resistance, case to heatsink | RthCK | 0.5 | °C/W | TO-220 | 2 | ||
| Input capacitance | Cies | 3190 | pF | 2 | |||
| Output capacitance | Coes | 175 | pF | VCE = 25V, VGE = 0V, f = 1MHz | 2 | ||
| Reverse transfer capacitance | Cres | 43 | pF | 2 | |||
| Total gate charge | Qg | 110 | nC | 2 | |||
| Gate-emitter charge | Qge | 21 | nC | IC = 32A, VGE = 15V, VCE = 0.5 • VCES | 2 | ||
| Gate-collector charge | Qgc | 42 | nC | 2 | |||
| Turn-on delay time | td(on) | 25 | ns | Inductive load, TJ = 25°C; IC = 32A, VGE = 15V; VCE = 480V, RG = 5Ω; Note 2 | 2 | ||
| Current rise time | tri | 30 | ns | Inductive load, TJ = 25°C; IC = 32A, VGE = 15V; VCE = 480V, RG = 5Ω; Note 2 | 2 | ||
| Turn-on switching energy loss | Eon | 0.95 | mJ | Inductive load, TJ = 25°C; IC = 32A, VGE = 15V; VCE = 480V, RG = 5Ω; Note 2 | 2 | ||
| Turn-off delay time | td(off) | 334 | ns | Inductive load, TJ = 25°C; IC = 32A, VGE = 15V; VCE = 480V, RG = 5Ω; Note 2 | 2 | ||
| Current fall time | tfi | 224 | ns | Inductive load, TJ = 25°C; IC = 32A, VGE = 15V; VCE = 480V, RG = 5Ω; Note 2 | 2 | ||
| Turn-off switching energy loss | Eoff | 2.9 | mJ | Inductive load, TJ = 25°C; IC = 32A, VGE = 15V; VCE = 480V, RG = 5Ω; Note 2 | 2 | ||
| Turn-on delay time | td(on) | 24 | ns | Inductive load, TJ = 125°C; IC = 32A, VGE = 15V; VCE = 480V, RG = 5Ω; Note 2 | 2 | ||
| Turn-on switching energy loss | Eon | 1.97 | mJ | Inductive load, TJ = 125°C; IC = 32A, VGE = 15V; VCE = 480V, RG = 5Ω; Note 2 | 2 | ||
| Turn-off delay time | td(off) | 545 | ns | Inductive load, TJ = 125°C; IC = 32A, VGE = 15V; VCE = 480V, RG = 5Ω; Note 2 | 2 | ||
| Current fall time | tfi | 380 | ns | Inductive load, TJ = 125°C; IC = 32A, VGE = 15V; VCE = 480V, RG = 5Ω; Note 2 | 2 | ||
| Turn-off switching energy loss | Eoff | 5.6 | mJ | Inductive load, TJ = 125°C; IC = 32A, VGE = 15V; VCE = 480V, RG = 5Ω; Note 2 | 2 |
CAD (KiCad official)
- Symbol:
IXGP48N60A3 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ixgp48n60a3-etched.step/ixgp48n60a3-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixgp48n60a3.step/ixgp48n60a3.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Littelfuse/IXYS datasheet (7 pp, sha256
541843affa46d0e8, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).