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NCE2312
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE2312
Wuxi NCE Power Semiconductor · MOSFETs · SOT-23
NCE2312 from Wuxi NCE Power Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; VGS limited to ±12V, with RDS(ON) below 40mΩ at VGS=2.5V and below 33mΩ at VGS=4.5V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with continuous drain current of 4.5A at TA=25℃. |
| 3 | D | passive | Drain; VDS maximum 20V, continuous current 4.5A at TA=25℃ and 13.5A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 4.5 | A | TA =25℃ | 1 | ||
| Continuous Drain Current | ID | 3.6 | A | T =70℃ | 1 | ||
| Drain Current-Pulsed | IDM | 13.5 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | ℃/W | Note 2: surface mounted on FR4 board, t ≤ 10 sec | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | 22 | V | VGS=0V ID=250μA | 1 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.65 | 1.2 | V | VDS=VGS,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 21 | 40 | mΩ | VGS=2.5V, ID=4.0 A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 18 | 33 | mΩ | VGS=4.5V, ID=4.5A | 2 | |
| Turn-on Delay Time | td(on) | 20 | 40 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 2 | |
| Turn-on Rise Time | tr | 18 | 40 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 2 | |
| Turn-Off Delay Time | td(off) | 60 | 108 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 2 | |
| Turn-Off Fall Time | tf | 28 | 56 | nS | VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω | 2 | |
| Total Gate Charge | Qg | 10 | 15 | nC | VDS=10V,ID=3A,VGS=4.5V | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=1A | 2 | ||
| Diode Forward Current | IS | 4.5 | A | 2 |
CAD (KiCad official)
- Symbol:
NCE2312 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nce2312-etched.step/nce2312-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nce2312.step/nce2312.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
69e37dd58aa9be4a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).