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NCE2312

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Wuxi NCE Power Semiconductor MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCE2312

Wuxi NCE Power Semiconductor · MOSFETs · SOT-23

NCE2312 from Wuxi NCE Power Semiconductor, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; VGS limited to ±12V, with RDS(ON) below 40mΩ at VGS=2.5V and below 33mΩ at VGS=4.5V.
2 S passive Source terminal of the N-channel MOSFET, with continuous drain current of 4.5A at TA=25℃.
3 D passive Drain; VDS maximum 20V, continuous current 4.5A at TA=25℃ and 13.5A pulsed.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 4.5 A TA =25℃ 1
Continuous Drain Current ID 3.6 A T =70℃ 1
Drain Current-Pulsed IDM 13.5 A Note 1 1
Maximum Power Dissipation PD 1.25 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 100 ℃/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1
Drain-Source Breakdown Voltage BVDSS 20 22 V VGS=0V ID=250μA 1
Gate Threshold Voltage VGS(th) 0.5 0.65 1.2 V VDS=VGS,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Drain-Source On-State Resistance RDS(ON) 21 40 mΩ VGS=2.5V, ID=4.0 A 2
Drain-Source On-State Resistance RDS(ON) 18 33 mΩ VGS=4.5V, ID=4.5A 2
Turn-on Delay Time td(on) 20 40 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Turn-on Rise Time tr 18 40 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Turn-Off Delay Time td(off) 60 108 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Turn-Off Fall Time tf 28 56 nS VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω 2
Total Gate Charge Qg 10 15 nC VDS=10V,ID=3A,VGS=4.5V 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=1A 2
Diode Forward Current IS 4.5 A 2

CAD (KiCad official)

  • Symbol: NCE2312
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nce2312-etched.step / nce2312-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce2312.step / nce2312.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 69e37dd58aa9be4a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF