component
ISL9N306AD3ST
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownISL9N306AD3ST
UMW · MOSFETs · TO-252
ISL9N306AD3ST from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 30V N-channel MOSFET; the datasheet rates gate-to-source voltage VGS at ±20 V. |
| 2 | D | passive | DRAIN terminal; the datasheet rates continuous drain current at 50 A (TC=25°C, VGS=10V) and drain-to-source voltage VDSS at 30 V. |
| 3 | S | passive | SOURCE terminal; the datasheet gives RDS(ON) < 5.2 mΩ at VGS=10V and < 8.5 mΩ at VGS=4.5V, measured between drain and source. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 30 | V | 1 | |||
| Gate to Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current Continuous | ID | 50 | A | TC=25°C, VGS=10V | 1 | ||
| Drain Current Continuous | ID | 16 | A | TC=25°C, VGS=V, RθJC=52°C/W | 1 | ||
| Power Dissipation | PD | 125 | W | 1 | |||
| Derate above 25°C | 0.83 | W/°C | 1 | ||||
| Operating and Storage Temperature | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case TO-252 | RθJC | 1.2 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient TO-252 | RθJA | 100 | °C/W | 2 | |||
| Thermal Resistance, Junction-to-Ambient TO-252, 1 in² copper pad area | RθJA | 52 | °C/W | 2 | |||
| Drain to Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=25V | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V | 3 | |
| Gate to Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250µA | 3 | |
| Drain to Source On Resistance | RDS(ON) | 5.2 | mΩ | ID=50A, VGS=10V | 3 | ||
| Drain to Source On Resistance | RDS(ON) | 8.5 | mΩ | ID=50A, VGS=4.5V | 3 | ||
| Avalanche Time | tav | 428 | µs | ID=30A, L=200µH | 4 | ||
| Reverse Recovery Time | trr | 35 | ns | ISD=50A, dISD/dt=100A/µs | 4 | ||
| Reverse Recovery Charge | Qrr | 30 | nC | ISD=50A, dISD/dt=100A/µs | 4 | ||
| Source to Drain Diode Forward Voltage | VSD | 1.25 | V | ISD=50A | 4 | ||
| Source to Drain Diode Forward Voltage | VSD | 1 | V | ISD=25A | 4 |
CAD (KiCad official)
- Symbol:
ISL9N306AD3ST - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
isl9n306ad3st-etched.step/isl9n306ad3st-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);isl9n306ad3st.step/isl9n306ad3st.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
448a6409e2b162af, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).