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ISL9N306AD3ST

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UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ISL9N306AD3ST

UMW · MOSFETs · TO-252

ISL9N306AD3ST from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the 30V N-channel MOSFET; the datasheet rates gate-to-source voltage VGS at ±20 V.
2 D passive DRAIN terminal; the datasheet rates continuous drain current at 50 A (TC=25°C, VGS=10V) and drain-to-source voltage VDSS at 30 V.
3 S passive SOURCE terminal; the datasheet gives RDS(ON) < 5.2 mΩ at VGS=10V and < 8.5 mΩ at VGS=4.5V, measured between drain and source.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDSS 30 V 1
Gate to Source Voltage VGS -20 20 V 1
Drain Current Continuous ID 50 A TC=25°C, VGS=10V 1
Drain Current Continuous ID 16 A TC=25°C, VGS=V, RθJC=52°C/W 1
Power Dissipation PD 125 W 1
Derate above 25°C 0.83 W/°C 1
Operating and Storage Temperature TJ, TSTG -55 175 °C 1
Thermal Resistance, Junction-to-Case TO-252 RθJC 1.2 °C/W 2
Thermal Resistance, Junction-to-Ambient TO-252 RθJA 100 °C/W 2
Thermal Resistance, Junction-to-Ambient TO-252, 1 in² copper pad area RθJA 52 °C/W 2
Drain to Source Breakdown Voltage BVDSS 30 V ID=250µA, VGS=0V 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=25V 3
Gate to Source Leakage Current IGSS -100 100 nA VGS=±20V 3
Gate to Source Threshold Voltage VGS(th) 1 3 V VDS=VGS, ID=250µA 3
Drain to Source On Resistance RDS(ON) 5.2 mΩ ID=50A, VGS=10V 3
Drain to Source On Resistance RDS(ON) 8.5 mΩ ID=50A, VGS=4.5V 3
Avalanche Time tav 428 µs ID=30A, L=200µH 4
Reverse Recovery Time trr 35 ns ISD=50A, dISD/dt=100A/µs 4
Reverse Recovery Charge Qrr 30 nC ISD=50A, dISD/dt=100A/µs 4
Source to Drain Diode Forward Voltage VSD 1.25 V ISD=50A 4
Source to Drain Diode Forward Voltage VSD 1 V ISD=25A 4

CAD (KiCad official)

  • Symbol: ISL9N306AD3ST
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: isl9n306ad3st-etched.step / isl9n306ad3st-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); isl9n306ad3st.step / isl9n306ad3st.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 448a6409e2b162af, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF