# ISL9N306AD3ST

**UMW** · MOSFETs · TO-252

ISL9N306AD3ST from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 30V N-channel MOSFET; the datasheet rates gate-to-source voltage VGS at ±20 V. |
| 2 | D | passive | DRAIN terminal; the datasheet rates continuous drain current at 50 A (TC=25°C, VGS=10V) and drain-to-source voltage VDSS at 30 V. |
| 3 | S | passive | SOURCE terminal; the datasheet gives RDS(ON) < 5.2 mΩ at VGS=10V and < 8.5 mΩ at VGS=4.5V, measured between drain and source. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS |  |  | 30 | V |  | 1 |
| Gate to Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current Continuous | ID |  |  | 50 | A | TC=25°C, VGS=10V | 1 |
| Drain Current Continuous | ID |  |  | 16 | A | TC=25°C, VGS=V, RθJC=52°C/W | 1 |
| Power Dissipation | PD |  |  | 125 | W |  | 1 |
| Derate above 25°C |  |  |  | 0.83 | W/°C |  | 1 |
| Operating and Storage Temperature | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Thermal Resistance, Junction-to-Case TO-252 | RθJC |  |  | 1.2 | °C/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient TO-252 | RθJA |  |  | 100 | °C/W |  | 2 |
| Thermal Resistance, Junction-to-Ambient TO-252, 1 in² copper pad area | RθJA |  |  | 52 | °C/W |  | 2 |
| Drain to Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=25V | 3 |
| Gate to Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V | 3 |
| Gate to Source Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS=VGS, ID=250µA | 3 |
| Drain to Source On Resistance | RDS(ON) |  |  | 5.2 | mΩ | ID=50A, VGS=10V | 3 |
| Drain to Source On Resistance | RDS(ON) |  |  | 8.5 | mΩ | ID=50A, VGS=4.5V | 3 |
| Avalanche Time | tav |  |  | 428 | µs | ID=30A, L=200µH | 4 |
| Reverse Recovery Time | trr |  |  | 35 | ns | ISD=50A, dISD/dt=100A/µs | 4 |
| Reverse Recovery Charge | Qrr |  |  | 30 | nC | ISD=50A, dISD/dt=100A/µs | 4 |
| Source to Drain Diode Forward Voltage | VSD |  |  | 1.25 | V | ISD=50A | 4 |
| Source to Drain Diode Forward Voltage | VSD |  |  | 1 | V | ISD=25A | 4 |

## CAD (KiCad official)

- Symbol: `ISL9N306AD3ST`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `isl9n306ad3st-etched.step` / `isl9n306ad3st-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `isl9n306ad3st.step` / `isl9n306ad3st.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755878261283278848) (10 pp, sha256 `448a6409e2b162af`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/isl9n306ad3st-datasheet.pdf)