component
S8050D331
Public Made by Adomby adom
ALJ Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownS8050D331
ALJ · Bipolar (BJT) · TO-92
S8050D331 from ALJ, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter of the NPN transistor, with emitter-base breakdown voltage V(BR)EBO of 5 V minimum and VEBO rated at 5 V. |
| 2 | B | passive | Base of the NPN transistor, with base drive for VBE(sat) of 1.2 V at IC = 500 mA, IB = 50 mA. |
| 3 | C | passive | Collector of the NPN transistor, rated for collector current IC of 500 mA, VCEO of 25 V and VCBO of 40 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALJ |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC = 100µA, IE = 0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 25 | V | IC = 0.1mA, IB = 0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE = 100µA, IC = 0 | 1 | ||
| Collector cut-off current | ICBO | 100 | nA | VCB = 40V, IE = 0 | 1 | ||
| Emitter cut-off current | IEBO | 100 | nA | VEB = 5V, IC = 0 | 1 | ||
| DC current gain hFE(1) | hFE(1) | 85 | VCE = 1V, IC = 50mA | 1 | |||
| DC current gain hFE(2) | hFE(2) | 85 | 400 | VCE = 5V, IC = 100mA | 1 | ||
| DC current gain hFE(3) | hFE(3) | 50 | VCE = 1V, IC = 500mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.6 | V | IC = 500mA, IB = 50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC = 500mA, IB = 50mA | 1 | ||
| Collector Base Voltage | VCBO | 40 | V | 1 | |||
| Collector Emitter Voltage | VCEO | 25 | V | 1 | |||
| Emitter Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current | IC | 500 | mA | 1 | |||
| Collector Power Dissipation | PC | 625 | mW | 1 | |||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | °C | 1 | ||
| Transition frequency | fT | 150 | MHz | VCE=6V, IC=20mA, f=30MHz | 1 |
CAD (KiCad official)
- Symbol:
S8050D331 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
s8050d331-etched.step/s8050d331-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s8050d331.step/s8050d331.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ALJ datasheet (2 pp, sha256
1a4872e8dfce670d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).