component

S8050D331

Public Made by Adom

by adom

ALJ Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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S8050D331

ALJ · Bipolar (BJT) · TO-92

S8050D331 from ALJ, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter of the NPN transistor, with emitter-base breakdown voltage V(BR)EBO of 5 V minimum and VEBO rated at 5 V.
2 B passive Base of the NPN transistor, with base drive for VBE(sat) of 1.2 V at IC = 500 mA, IB = 50 mA.
3 C passive Collector of the NPN transistor, rated for collector current IC of 500 mA, VCEO of 25 V and VCBO of 40 V.

Key specifications

Parameter Value
Manufacturer ALJ
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO 40 V IC = 100µA, IE = 0 1
Collector-emitter breakdown voltage V(BR)CEO 25 V IC = 0.1mA, IB = 0 1
Emitter-base breakdown voltage V(BR)EBO 5 V IE = 100µA, IC = 0 1
Collector cut-off current ICBO 100 nA VCB = 40V, IE = 0 1
Emitter cut-off current IEBO 100 nA VEB = 5V, IC = 0 1
DC current gain hFE(1) hFE(1) 85 VCE = 1V, IC = 50mA 1
DC current gain hFE(2) hFE(2) 85 400 VCE = 5V, IC = 100mA 1
DC current gain hFE(3) hFE(3) 50 VCE = 1V, IC = 500mA 1
Collector-emitter saturation voltage VCE(sat) 0.6 V IC = 500mA, IB = 50mA 1
Base-emitter saturation voltage VBE(sat) 1.2 V IC = 500mA, IB = 50mA 1
Collector Base Voltage VCBO 40 V 1
Collector Emitter Voltage VCEO 25 V 1
Emitter Base Voltage VEBO 5 V 1
Collector Current IC 500 mA 1
Collector Power Dissipation PC 625 mW 1
Junction Temperature Tj 150 °C 1
Storage Temperature Tstg -55 150 °C 1
Transition frequency fT 150 MHz VCE=6V, IC=20mA, f=30MHz 1

CAD (KiCad official)

  • Symbol: S8050D331
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: s8050d331-etched.step / s8050d331-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s8050d331.step / s8050d331.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ALJ datasheet (2 pp, sha256 1a4872e8dfce670d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF