component
SE60210GA
Public Made by Adomby adom
SINO IC MOSFETs, TO-220. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownSE60210GA
SINO IC · MOSFETs · TO-220
SE60210GA from SINO IC, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated gate control terminal for the N-channel enhancement-mode MOSFET. VGS(th) = 2.0-4.0 V; absolute maximum VGS = ±20 V. |
| 2 | D | passive | Drain. Also connected to the metal tab of the TO-220 package for heat sinking. VDS(max) = 60 V; continuous ID = 210 A, pulsed ID = 800 A. |
| 3 | S | passive | Source. Reference terminal for the MOSFET; body diode anode is internally connected to Source. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS= VGS, ID=250μA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | ID=250μA, VGS=0 V | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | μA | VDS= 48V, VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2.2 | 2.6 | mΩ | VGS=10V, ID=20A | 2 | |
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current, Continuous | ID | 210 | A | Continuous | 1 | ||
| Drain Current, Pulsed | ID | 800 | A | Pulsed | 1 | ||
| Total Power Dissipation | PD | 300 | W | TA=25℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Input Capacitance | Ciss | 7070 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 2140 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 63 | pF | VGS=0V, VDS=30V, f=1MHz | 2 | ||
| Total Gate Charge | Qg | 85 | nC | VGS=10V, VDS=30V, ID=20A | 2 | ||
| Gate Source Charge | Qgs | 24 | nC | VGS=10V, VDS=30V, ID=20A | 2 | ||
| Gate Drain Charge | Qgd | 14 | nC | VGS=10V, VDS=30V, ID=20A | 2 | ||
| Turn-On Delay Time | td(on) | 36 | ns | VGS=10V, VDS=30V, RGEN=10Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 95 | ns | VGS=10V, VDS=30V, RGEN=10Ω | 2 | ||
| Turn-On Rise Time | td(r) | 62 | ns | VGS=10V, VDS=30V, RGEN=10Ω | 2 | ||
| Turn-Off Fall Time | td(f) | 34 | ns | VGS=10V, VDS=30V, RGEN=10Ω | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.5 | ℃/W | 2 |
CAD (KiCad official)
- Symbol:
SE60210GA - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
se60210ga-etched.step/se60210ga-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);se60210ga.step/se60210ga.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SINO IC datasheet (5 pp, sha256
bf86c08c022bc870, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).