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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	se60210ga: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
viewers	se60210ga: viewers · Ray	1mo ago
package.json	Publish 0.1.0 · Ray	1mo ago
page.json	se60210ga: specified limits as data (metadata.characteristics, 22 rows from the datasheet) · Ray	23d ago
README.md	se60210ga: specified limits as data (metadata.characteristics, 22 rows from the datasheet) · Ray	23d ago
se60210ga-etched.fit.json	se60210ga: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
se60210ga-etched.glb	se60210ga: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
se60210ga-etched.step	se60210ga: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray	1mo ago
se60210ga.glb	Publish 0.1.0 · Ray	1mo ago
se60210ga.kicad_mod	Publish 0.1.0 · Ray	1mo ago
se60210ga.kicad_sym	Publish 0.1.0 · Ray	1mo ago
se60210ga.lbr	Publish 0.1.0 · Ray	1mo ago
se60210ga.step	Publish 0.1.0 · Ray	1mo ago

SE60210GA

SINO IC · MOSFETs · TO-220

SE60210GA from SINO IC, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate. Insulated gate control terminal for the N-channel enhancement-mode MOSFET. VGS(th) = 2.0-4.0 V; absolute maximum VGS = ±20 V.
2	D	passive	Drain. Also connected to the metal tab of the TO-220 package for heat sinking. VDS(max) = 60 V; continuous ID = 210 A, pulsed ID = 800 A.
3	S	passive	Source. Reference terminal for the MOSFET; body diode anode is internally connected to Source.

Key specifications

Parameter	Value
Manufacturer	SINO IC
Package	TO-220
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Gate Threshold Voltage	VGS(th)	2	3	4	V	VDS= VGS, ID=250μA	2
Drain-Source Breakdown Voltage	BVDSS	60			V	ID=250μA, VGS=0 V	2
Drain to Source Leakage Current	IDSS			1	μA	VDS= 48V, VGS=0V	2
Gate-Body Leakage Current	IGSS			100	nA	VGS=20V	2
Static Drain-Source On-Resistance	RDS(ON)		2.2	2.6	mΩ	VGS=10V, ID=20A	2
Drain-Source Voltage	VDS			60	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Drain Current, Continuous	ID			210	A	Continuous	1
Drain Current, Pulsed	ID			800	A	Pulsed	1
Total Power Dissipation	PD			300	W	TA=25℃	1
Operating Junction Temperature Range	TJ	-55		175	℃		1
Input Capacitance	Ciss		7070		pF	VGS=0V, VDS=30V, f=1MHz	2
Output Capacitance	Coss		2140		pF	VGS=0V, VDS=30V, f=1MHz	2
Reverse Transfer Capacitance	Crss		63		pF	VGS=0V, VDS=30V, f=1MHz	2
Total Gate Charge	Qg		85		nC	VGS=10V, VDS=30V, ID=20A	2
Gate Source Charge	Qgs		24		nC	VGS=10V, VDS=30V, ID=20A	2
Gate Drain Charge	Qgd		14		nC	VGS=10V, VDS=30V, ID=20A	2
Turn-On Delay Time	td(on)		36		ns	VGS=10V, VDS=30V, RGEN=10Ω	2
Turn-Off Delay Time	td(off)		95		ns	VGS=10V, VDS=30V, RGEN=10Ω	2
Turn-On Rise Time	td(r)		62		ns	VGS=10V, VDS=30V, RGEN=10Ω	2
Turn-Off Fall Time	td(f)		34		ns	VGS=10V, VDS=30V, RGEN=10Ω	2
Thermal Resistance, Junction to Case	RθJC		0.5		℃/W		2

CAD (KiCad official)

Symbol: SE60210GA
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220 (KiCad packages3D, STEP)
3D model files: se60210ga-etched.step / se60210ga-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); se60210ga.step / se60210ga.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: SINO IC datasheet (5 pp, sha256 bf86c08c022bc870, retrieved 2026-08-17, tier: lcsc)
Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF