# SE60210GA

**SINO IC** · MOSFETs · TO-220

SE60210GA from SINO IC, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated gate control terminal for the N-channel enhancement-mode MOSFET. VGS(th) = 2.0-4.0 V; absolute maximum VGS = ±20 V. |
| 2 | D | passive | Drain. Also connected to the metal tab of the TO-220 package for heat sinking. VDS(max) = 60 V; continuous ID = 210 A, pulsed ID = 800 A. |
| 3 | S | passive | Source. Reference terminal for the MOSFET; body diode anode is internally connected to Source. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | SINO IC |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS= VGS, ID=250μA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | ID=250μA, VGS=0 V | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 1 | μA | VDS= 48V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS |  |  | 100 | nA | VGS=20V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 2.2 | 2.6 | mΩ | VGS=10V, ID=20A | 2 |
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Drain Current, Continuous | ID |  |  | 210 | A | Continuous | 1 |
| Drain Current, Pulsed | ID |  |  | 800 | A | Pulsed | 1 |
| Total Power Dissipation | PD |  |  | 300 | W | TA=25℃ | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 175 | ℃ |  | 1 |
| Input Capacitance | Ciss |  | 7070 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 2140 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 63 |  | pF | VGS=0V, VDS=30V, f=1MHz | 2 |
| Total Gate Charge | Qg |  | 85 |  | nC | VGS=10V, VDS=30V, ID=20A | 2 |
| Gate Source Charge | Qgs |  | 24 |  | nC | VGS=10V, VDS=30V, ID=20A | 2 |
| Gate Drain Charge | Qgd |  | 14 |  | nC | VGS=10V, VDS=30V, ID=20A | 2 |
| Turn-On Delay Time | td(on) |  | 36 |  | ns | VGS=10V, VDS=30V, RGEN=10Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 95 |  | ns | VGS=10V, VDS=30V, RGEN=10Ω | 2 |
| Turn-On Rise Time | td(r) |  | 62 |  | ns | VGS=10V, VDS=30V, RGEN=10Ω | 2 |
| Turn-Off Fall Time | td(f) |  | 34 |  | ns | VGS=10V, VDS=30V, RGEN=10Ω | 2 |
| Thermal Resistance, Junction to Case | RθJC |  | 0.5 |  | ℃/W |  | 2 |

## CAD (KiCad official)

- Symbol: `SE60210GA`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `se60210ga-etched.step` / `se60210ga-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `se60210ga.step` / `se60210ga.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [SINO IC datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887810157776896) (5 pp, sha256 `bf86c08c022bc870`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/se60210ga-datasheet.pdf)