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Contents

README

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MOT13003D

MOT · Bipolar (BJT) · TO-252

MOT13003D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; VEBO max 9 V, continuous base current 0.75 A (1.5 A peak).
2 C passive Collector (also the mounting tab); VCEO(SUS) 400 V, VCBO 700 V, continuous IC 1.5 A (3 A peak).
3 E passive Emitter of the NPN transistor; continuous emitter current 2.25 A (4.5 A peak).

Key specifications

Parameter Value
Manufacturer MOT
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Sustaining Voltage (absolute maximum) VCEO(SUS) 400 V 1
Collector-Emitter Voltage (VBE=0) VCES 700 V 1
Collector-Base Voltage VCBO 700 V 1
Emitter Base Voltage VEBO 9 V 1
Continuous Collector Current IC 1.5 A 1
Peak Collector Current ICM 3 A 1
Continuous Base Current IB 0.75 A 1
Peak Base Current IBM 1.5 A 1
Continuous Emitter Current IE 2.25 A 1
Peak Emitter Current IEM 4.5 A 1
Total Power Dissipation (TO-251/TO-252) PD 1.56 W TA=25°C 1
Total Power Dissipation (TO-251/TO-252) PD 25 W TC=25°C 1
Junction Temperature TJ 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Collector-Emitter Sustaining Voltage VCEO(SUS) 400 V IC=10 mA, IB=0 2
Collector Cutoff Current ICEO 1 mA TC=25°C; VCEO=Rated Value, VBE(OFF)=1.5 V 2
Collector Cutoff Current ICEO 5 mA TC=100°C; VCEO=Rated Value, VBE(OFF)=1.5 V 2
Emitter Cutoff Current IEBO 1 mA VEB=9 V, IC=0 2
DC Current Gain hFE1 14 32 IC=0.4A, VCE=5V 2
DC Current Gain hFE2 5 30 IC=1A, VCE=5V 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.5 V IC=0.5A, IB=0.1A 2
Collector-Emitter Saturation Voltage VCE(SAT) 1 V IC=1A, IB=0.25A 2
Collector-Emitter Saturation Voltage VCE(SAT) 3 V IC=1.2A, IB=0.4A 2
Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC=1A, IB=0.25A 2
Base-Emitter Saturation Voltage VBE(SAT) 1.1 V IC=1A, IB=0.25A, TC=100°C 2
Current-Gain-Bandwidth Product fT 4 10 MHz IC=100mA, VCE=10V, f=1MHz 2
Delay Time (resistive load) tD 0.05 0.1 µs Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% 2
Rise Time (resistive load) tR 0.5 1 µs Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% 2
Storage Time (resistive load) tS 2 4 µs Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% 2
Fall Time (resistive load) tF 0.4 0.7 µs Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% 2
Storage Time (inductive load, clamped) tSTG 1.7 4 µs Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C 2
Crossover Time (inductive load, clamped) tC 0.29 0.75 µs Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C 2
Output Capacitance COB 21 pF VCB=10V, IE=0, f=0.1MHz 2
Fall Time (inductive load, clamped) tF 0.15 µs Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C 2

CAD (KiCad official)

  • Symbol: MOT13003D
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mot13003d-etched.step / mot13003d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mot13003d.step / mot13003d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MOT datasheet (6 pp, sha256 662f1b4f3de567a7, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF