component
MOT13003D
Public Made by Adomby adom
MOT Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 24d ago |
| mot13003d-etched.glb | 17d ago |
| mot13003d-etched.step | 17d ago |
| mot13003d-hero.glb | 17d ago |
| mot13003d-hero.overlay.json | 17d ago |
| mot13003d.glb | 24d ago |
| mot13003d.kicad_mod | 24d ago |
| mot13003d.kicad_sym | 24d ago |
| mot13003d.lbr | 24d ago |
| mot13003d.step | 24d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 18d ago |
MOT13003D
MOT · Bipolar (BJT) · TO-252
MOT13003D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 9 V, continuous base current 0.75 A (1.5 A peak). |
| 2 | C | passive | Collector (also the mounting tab); VCEO(SUS) 400 V, VCBO 700 V, continuous IC 1.5 A (3 A peak). |
| 3 | E | passive | Emitter of the NPN transistor; continuous emitter current 2.25 A (4.5 A peak). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage (absolute maximum) | VCEO(SUS) | 400 | V | 1 | |||
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | V | 1 | |||
| Collector-Base Voltage | VCBO | 700 | V | 1 | |||
| Emitter Base Voltage | VEBO | 9 | V | 1 | |||
| Continuous Collector Current | IC | 1.5 | A | 1 | |||
| Peak Collector Current | ICM | 3 | A | 1 | |||
| Continuous Base Current | IB | 0.75 | A | 1 | |||
| Peak Base Current | IBM | 1.5 | A | 1 | |||
| Continuous Emitter Current | IE | 2.25 | A | 1 | |||
| Peak Emitter Current | IEM | 4.5 | A | 1 | |||
| Total Power Dissipation (TO-251/TO-252) | PD | 1.56 | W | TA=25°C | 1 | ||
| Total Power Dissipation (TO-251/TO-252) | PD | 25 | W | TC=25°C | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Collector-Emitter Sustaining Voltage | VCEO(SUS) | 400 | V | IC=10 mA, IB=0 | 2 | ||
| Collector Cutoff Current | ICEO | 1 | mA | TC=25°C; VCEO=Rated Value, VBE(OFF)=1.5 V | 2 | ||
| Collector Cutoff Current | ICEO | 5 | mA | TC=100°C; VCEO=Rated Value, VBE(OFF)=1.5 V | 2 | ||
| Emitter Cutoff Current | IEBO | 1 | mA | VEB=9 V, IC=0 | 2 | ||
| DC Current Gain | hFE1 | 14 | 32 | IC=0.4A, VCE=5V | 2 | ||
| DC Current Gain | hFE2 | 5 | 30 | IC=1A, VCE=5V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.5 | V | IC=0.5A, IB=0.1A | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 1 | V | IC=1A, IB=0.25A | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 3 | V | IC=1.2A, IB=0.4A | 2 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.2 | V | IC=1A, IB=0.25A | 2 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.1 | V | IC=1A, IB=0.25A, TC=100°C | 2 | ||
| Current-Gain-Bandwidth Product | fT | 4 | 10 | MHz | IC=100mA, VCE=10V, f=1MHz | 2 | |
| Delay Time (resistive load) | tD | 0.05 | 0.1 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 | |
| Rise Time (resistive load) | tR | 0.5 | 1 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 | |
| Storage Time (resistive load) | tS | 2 | 4 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 | |
| Fall Time (resistive load) | tF | 0.4 | 0.7 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 | |
| Storage Time (inductive load, clamped) | tSTG | 1.7 | 4 | µs | Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C | 2 | |
| Crossover Time (inductive load, clamped) | tC | 0.29 | 0.75 | µs | Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C | 2 | |
| Output Capacitance | COB | 21 | pF | VCB=10V, IE=0, f=0.1MHz | 2 | ||
| Fall Time (inductive load, clamped) | tF | 0.15 | µs | Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C | 2 |
CAD (KiCad official)
- Symbol:
MOT13003D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot13003d-etched.step/mot13003d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot13003d.step/mot13003d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (6 pp, sha256
662f1b4f3de567a7, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).