component
MOT13003D
Public Made by Adomby adom
MOT Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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mot13003d: specified limits as data (metadata.characteristics, 34 rows from the datasheet)
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18d ago
MOT13003D
MOT · Bipolar (BJT) · TO-252
MOT13003D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 9 V, continuous base current 0.75 A (1.5 A peak). |
| 2 | C | passive | Collector (also the mounting tab); VCEO(SUS) 400 V, VCBO 700 V, continuous IC 1.5 A (3 A peak). |
| 3 | E | passive | Emitter of the NPN transistor; continuous emitter current 2.25 A (4.5 A peak). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage (absolute maximum) | VCEO(SUS) | 400 | V | 1 | |||
| Collector-Emitter Voltage (VBE=0) | VCES | 700 | V | 1 | |||
| Collector-Base Voltage | VCBO | 700 | V | 1 | |||
| Emitter Base Voltage | VEBO | 9 | V | 1 | |||
| Continuous Collector Current | IC | 1.5 | A | 1 | |||
| Peak Collector Current | ICM | 3 | A | 1 | |||
| Continuous Base Current | IB | 0.75 | A | 1 | |||
| Peak Base Current | IBM | 1.5 | A | 1 | |||
| Continuous Emitter Current | IE | 2.25 | A | 1 | |||
| Peak Emitter Current | IEM | 4.5 | A | 1 | |||
| Total Power Dissipation (TO-251/TO-252) | PD | 1.56 | W | TA=25°C | 1 | ||
| Total Power Dissipation (TO-251/TO-252) | PD | 25 | W | TC=25°C | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Collector-Emitter Sustaining Voltage | VCEO(SUS) | 400 | V | IC=10 mA, IB=0 | 2 | ||
| Collector Cutoff Current | ICEO | 1 | mA | TC=25°C; VCEO=Rated Value, VBE(OFF)=1.5 V | 2 | ||
| Collector Cutoff Current | ICEO | 5 | mA | TC=100°C; VCEO=Rated Value, VBE(OFF)=1.5 V | 2 | ||
| Emitter Cutoff Current | IEBO | 1 | mA | VEB=9 V, IC=0 | 2 | ||
| DC Current Gain | hFE1 | 14 | 32 | IC=0.4A, VCE=5V | 2 | ||
| DC Current Gain | hFE2 | 5 | 30 | IC=1A, VCE=5V | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.5 | V | IC=0.5A, IB=0.1A | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 1 | V | IC=1A, IB=0.25A | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 3 | V | IC=1.2A, IB=0.4A | 2 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.2 | V | IC=1A, IB=0.25A | 2 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.1 | V | IC=1A, IB=0.25A, TC=100°C | 2 | ||
| Current-Gain-Bandwidth Product | fT | 4 | 10 | MHz | IC=100mA, VCE=10V, f=1MHz | 2 | |
| Delay Time (resistive load) | tD | 0.05 | 0.1 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 | |
| Rise Time (resistive load) | tR | 0.5 | 1 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 | |
| Storage Time (resistive load) | tS | 2 | 4 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 | |
| Fall Time (resistive load) | tF | 0.4 | 0.7 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 | |
| Storage Time (inductive load, clamped) | tSTG | 1.7 | 4 | µs | Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C | 2 | |
| Crossover Time (inductive load, clamped) | tC | 0.29 | 0.75 | µs | Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C | 2 | |
| Output Capacitance | COB | 21 | pF | VCB=10V, IE=0, f=0.1MHz | 2 | ||
| Fall Time (inductive load, clamped) | tF | 0.15 | µs | Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C | 2 |
CAD (KiCad official)
- Symbol:
MOT13003D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mot13003d-etched.step/mot13003d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mot13003d.step/mot13003d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MOT datasheet (6 pp, sha256
662f1b4f3de567a7, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# MOT13003D
**MOT** · Bipolar (BJT) · TO-252
MOT13003D from MOT, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 9 V, continuous base current 0.75 A (1.5 A peak). |
| 2 | C | passive | Collector (also the mounting tab); VCEO(SUS) 400 V, VCBO 700 V, continuous IC 1.5 A (3 A peak). |
| 3 | E | passive | Emitter of the NPN transistor; continuous emitter current 2.25 A (4.5 A peak). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MOT |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage (absolute maximum) | VCEO(SUS) | | | 400 | V | | 1 |
| Collector-Emitter Voltage (VBE=0) | VCES | | | 700 | V | | 1 |
| Collector-Base Voltage | VCBO | | | 700 | V | | 1 |
| Emitter Base Voltage | VEBO | | | 9 | V | | 1 |
| Continuous Collector Current | IC | | | 1.5 | A | | 1 |
| Peak Collector Current | ICM | | | 3 | A | | 1 |
| Continuous Base Current | IB | | | 0.75 | A | | 1 |
| Peak Base Current | IBM | | | 1.5 | A | | 1 |
| Continuous Emitter Current | IE | | | 2.25 | A | | 1 |
| Peak Emitter Current | IEM | | | 4.5 | A | | 1 |
| Total Power Dissipation (TO-251/TO-252) | PD | | | 1.56 | W | TA=25°C | 1 |
| Total Power Dissipation (TO-251/TO-252) | PD | | | 25 | W | TC=25°C | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Collector-Emitter Sustaining Voltage | VCEO(SUS) | 400 | | | V | IC=10 mA, IB=0 | 2 |
| Collector Cutoff Current | ICEO | | | 1 | mA | TC=25°C; VCEO=Rated Value, VBE(OFF)=1.5 V | 2 |
| Collector Cutoff Current | ICEO | | | 5 | mA | TC=100°C; VCEO=Rated Value, VBE(OFF)=1.5 V | 2 |
| Emitter Cutoff Current | IEBO | | | 1 | mA | VEB=9 V, IC=0 | 2 |
| DC Current Gain | hFE1 | 14 | | 32 | | IC=0.4A, VCE=5V | 2 |
| DC Current Gain | hFE2 | 5 | | 30 | | IC=1A, VCE=5V | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 0.5 | V | IC=0.5A, IB=0.1A | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 1 | V | IC=1A, IB=0.25A | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 3 | V | IC=1.2A, IB=0.4A | 2 |
| Base-Emitter Saturation Voltage | VBE(SAT) | | | 1.2 | V | IC=1A, IB=0.25A | 2 |
| Base-Emitter Saturation Voltage | VBE(SAT) | | | 1.1 | V | IC=1A, IB=0.25A, TC=100°C | 2 |
| Current-Gain-Bandwidth Product | fT | 4 | 10 | | MHz | IC=100mA, VCE=10V, f=1MHz | 2 |
| Delay Time (resistive load) | tD | | 0.05 | 0.1 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 |
| Rise Time (resistive load) | tR | | 0.5 | 1 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 |
| Storage Time (resistive load) | tS | | 2 | 4 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 |
| Fall Time (resistive load) | tF | | 0.4 | 0.7 | µs | Resistive load; VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25µs, duty cycle 1% | 2 |
| Storage Time (inductive load, clamped) | tSTG | | 1.7 | 4 | µs | Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C | 2 |
| Crossover Time (inductive load, clamped) | tC | | 0.29 | 0.75 | µs | Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C | 2 |
| Output Capacitance | COB | | 21 | | pF | VCB=10V, IE=0, f=0.1MHz | 2 |
| Fall Time (inductive load, clamped) | tF | | 0.15 | | µs | Inductive load clamped; IC=1A, Vclamp=300V, IB1=0.2A, VBE(OFF)=5Vdc, TC=100°C | 2 |
## CAD (KiCad official)
- Symbol: `MOT13003D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `mot13003d-etched.step` / `mot13003d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mot13003d.step` / `mot13003d.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MOT datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589907580740145152) (6 pp, sha256 `662f1b4f3de567a7`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/mot13003d-datasheet.pdf)