component
DMC2038LVT-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMC2038LVT-7
Diodes Incorporated · MOSFETs · TSOT-23-6
DMC2038LVT-7 from Diodes Incorporated, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of Q1, the N-channel MOSFET (20V BVDSS, 35mΩ at VGS=4.5V). |
| 2 | S1 | passive | Source of Q1, the N-channel MOSFET. |
| 3 | D2 | passive | Drain of Q2, the P-channel MOSFET (-20V BVDSS, 74mΩ at VGS=-4.5V). |
| 4 | G2 | input | Gate of Q2, the P-channel MOSFET; VGS rated ±12V. |
| 5 | S2 | passive | Source of Q2, the P-channel MOSFET. |
| 6 | G1 | input | Gate of Q1, the N-channel MOSFET; VGS rated ±12V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-23-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-ch Q1) | VDSS | 20 | V | 2 | |||
| Gate-Source Voltage (N-ch Q1) | VGSS | -12 | 12 | V | 2 | ||
| Continuous Drain Current (N-ch Q1) | ID | 3.7 | A | VGS = 4.5V, steady state, TA = +25°C (Note 6) | 2 | ||
| Continuous Drain Current (N-ch Q1) | ID | 4.5 | A | VGS = 4.5V, steady state, TA = +25°C (Note 7) | 2 | ||
| Continuous Drain Current (N-ch Q1) | ID | 3.6 | A | VGS = 4.5V, steady state, TA = +70°C (Note 7) | 2 | ||
| Continuous Drain Current (N-ch Q1) | ID | 5.2 | A | VGS = 4.5V, t<10s, TA = +25°C (Note 7) | 2 | ||
| Continuous Drain Current (N-ch Q1) | ID | 4.2 | A | VGS = 4.5V, t<10s, TA = +70°C (Note 7) | 2 | ||
| Maximum Continuous Body Diode Forward Current (N-ch Q1) | IS | 1.5 | A | Note 7 | 2 | ||
| Pulsed Drain Current (N-ch Q1) | IDM | 25 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Drain-Source Voltage (P-ch Q2) | VDSS | -20 | V | 2 | |||
| Gate-Source Voltage (P-ch Q2) | VGSS | -12 | 12 | V | 2 | ||
| Continuous Drain Current (P-ch Q2) | ID | -2.6 | A | VGS = -4.5V, steady state, TA = +25°C (Note 6) | 2 | ||
| Continuous Drain Current (P-ch Q2) | ID | -3.1 | A | VGS = -4.5V, steady state, TA = +25°C (Note 7) | 2 | ||
| Continuous Drain Current (P-ch Q2) | ID | -2.5 | A | VGS = -4.5V, steady state, TA = +70°C (Note 7) | 2 | ||
| Continuous Drain Current (P-ch Q2) | ID | -3.8 | A | VGS = -4.5V, t<10s, TA = +25°C (Note 7) | 2 | ||
| Continuous Drain Current (P-ch Q2) | ID | -3 | A | VGS = -4.5V, t<10s, TA = +70°C (Note 7) | 2 | ||
| Maximum Continuous Body Diode Forward Current (P-ch Q2) | IS | -1.5 | A | Note 7 | 2 | ||
| Pulsed Drain Current (P-ch Q2) | IDM | -17 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Total Power Dissipation | PD | 0.8 | W | TA = +25°C (Note 6) | 2 | ||
| Total Power Dissipation | PD | 0.5 | W | TA = +70°C (Note 6) | 2 | ||
| Total Power Dissipation | PD | 1.1 | W | TA = +25°C (Note 7) | 2 | ||
| Total Power Dissipation | PD | 0.7 | W | TA = +70°C (Note 7) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 168 | °C/W | Steady state (Note 6) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 120 | °C/W | t<10s (Note 6) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 114 | °C/W | Steady state (Note 7) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 72 | °C/W | t<10s (Note 7) | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 39 | °C/W | Note 7 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage (N-ch Q1) | BVDSS | 20 | V | VGS = 0V, ID = 250μA | 3 | ||
| Zero Gate Voltage Drain Current @TC = +25°C (N-ch Q1) | IDSS | 1 | μA | VDS = 16V, VGS = 0V | 3 | ||
| Gate-Source Leakage (N-ch Q1) | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 3 | |
| Gate Threshold Voltage (N-ch Q1) | VGS(TH) | 0.4 | 1 | V | VDS = VGS, ID = 250μA | 3 | |
| Static Drain-Source On-Resistance (N-ch Q1) | RDS(ON) | 27 | 35 | mΩ | VGS = 4.5V, ID = 4.0A | 3 | |
| Static Drain-Source On-Resistance (N-ch Q1) | RDS(ON) | 33 | 43 | mΩ | VGS = 2.5V, ID = 2.5A | 3 | |
| Static Drain-Source On-Resistance (N-ch Q1) | RDS(ON) | 43 | 56 | mΩ | VGS = 1.8V, ID = 1.5A | 3 | |
| Diode Forward Voltage (N-ch Q1) | VSD | 0.4 | 1.1 | V | VGS = 0V, IS = 1A | 3 | |
| Input Capacitance (N-ch Q1) | Ciss | 400 | 530 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | |
| Output Capacitance (N-ch Q1) | Coss | 70 | 90 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | |
| Reverse Transfer Capacitance (N-ch Q1) | Crss | 65 | 100 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 3 | |
| Total Gate Charge (VGS = 10V) (N-ch Q1) | Qg | 12 | 17 | nC | VDS = 15V, ID = 5.8A | 3 | |
| Turn-On Delay Time (N-ch Q1) | tD(ON) | 5 | 10 | ns | VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A | 3 | |
| Turn-On Rise Time (N-ch Q1) | tR | 8 | 16 | ns | VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A | 3 | |
| Turn-Off Delay Time (N-ch Q1) | tD(OFF) | 25 | 40 | ns | VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A | 3 | |
| Turn-Off Fall Time (N-ch Q1) | tF | 8 | 16 | ns | VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A | 3 | |
| Drain-Source Breakdown Voltage (P-ch Q2) | BVDSS | -20 | V | VGS = 0V, ID = -250μA | 6 | ||
| Zero Gate Voltage Drain Current @TC = +25°C (P-ch Q2) | IDSS | -1 | μA | VDS = -16V, VGS = 0V | 6 | ||
| Gate-Source Leakage (P-ch Q2) | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 6 | |
| Gate Threshold Voltage (P-ch Q2) | VGS(TH) | -0.4 | -1 | V | VDS = VGS, ID = -250μA | 6 | |
| Static Drain-Source On-Resistance (P-ch Q2) | RDS(ON) | 57 | 74 | mΩ | VGS = -4.5V, ID = -3.0A | 6 | |
| Static Drain-Source On-Resistance (P-ch Q2) | RDS(ON) | 76 | 110 | mΩ | VGS = -2.5V, ID = -1.5A | 6 | |
| Static Drain-Source On-Resistance (P-ch Q2) | RDS(ON) | 102 | 168 | mΩ | VGS = -1.8V, ID = -1.0A | 6 | |
| Diode Forward Voltage (P-ch Q2) | VSD | -0.8 | -1 | V | VGS = 0V, IS = -0.6A | 6 | |
| Input Capacitance (P-ch Q2) | Ciss | 530 | 705 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 6 | |
| Output Capacitance (P-ch Q2) | Coss | 70 | 95 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 6 | |
| Reverse Transfer Capacitance (P-ch Q2) | Crss | 60 | 90 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz | 6 | |
| Total Gate Charge (VGS = -4.5V) (P-ch Q2) | Qg | 7 | 10 | nC | VDS = -15V, ID = -6A | 6 | |
| Turn-On Delay Time (P-ch Q2) | tD(ON) | 11 | 20 | ns | VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A | 6 | |
| Turn-On Rise Time (P-ch Q2) | tR | 12 | 22 | ns | VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A | 6 | |
| Turn-Off Delay Time (P-ch Q2) | tD(OFF) | 21 | 34 | ns | VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A | 6 | |
| Turn-Off Fall Time (P-ch Q2) | tF | 13 | 23 | ns | VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A | 6 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMC2038LVT-7 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-23-6 (KiCad packages3D, STEP)
- 3D model files:
dmc2038lvt-7-etched.step/dmc2038lvt-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmc2038lvt-7.step/dmc2038lvt-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
f94e53961e1a70e9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).