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DMC2038LVT-7

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Diodes Incorporated MOSFETs, TSOT-23-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMC2038LVT-7

Diodes Incorporated · MOSFETs · TSOT-23-6

DMC2038LVT-7 from Diodes Incorporated, in a TSOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D1 passive Drain of Q1, the N-channel MOSFET (20V BVDSS, 35mΩ at VGS=4.5V).
2 S1 passive Source of Q1, the N-channel MOSFET.
3 D2 passive Drain of Q2, the P-channel MOSFET (-20V BVDSS, 74mΩ at VGS=-4.5V).
4 G2 input Gate of Q2, the P-channel MOSFET; VGS rated ±12V.
5 S2 passive Source of Q2, the P-channel MOSFET.
6 G1 input Gate of Q1, the N-channel MOSFET; VGS rated ±12V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSOT-23-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-ch Q1) VDSS 20 V 2
Gate-Source Voltage (N-ch Q1) VGSS -12 12 V 2
Continuous Drain Current (N-ch Q1) ID 3.7 A VGS = 4.5V, steady state, TA = +25°C (Note 6) 2
Continuous Drain Current (N-ch Q1) ID 4.5 A VGS = 4.5V, steady state, TA = +25°C (Note 7) 2
Continuous Drain Current (N-ch Q1) ID 3.6 A VGS = 4.5V, steady state, TA = +70°C (Note 7) 2
Continuous Drain Current (N-ch Q1) ID 5.2 A VGS = 4.5V, t<10s, TA = +25°C (Note 7) 2
Continuous Drain Current (N-ch Q1) ID 4.2 A VGS = 4.5V, t<10s, TA = +70°C (Note 7) 2
Maximum Continuous Body Diode Forward Current (N-ch Q1) IS 1.5 A Note 7 2
Pulsed Drain Current (N-ch Q1) IDM 25 A 10µs pulse, duty cycle = 1% 2
Drain-Source Voltage (P-ch Q2) VDSS -20 V 2
Gate-Source Voltage (P-ch Q2) VGSS -12 12 V 2
Continuous Drain Current (P-ch Q2) ID -2.6 A VGS = -4.5V, steady state, TA = +25°C (Note 6) 2
Continuous Drain Current (P-ch Q2) ID -3.1 A VGS = -4.5V, steady state, TA = +25°C (Note 7) 2
Continuous Drain Current (P-ch Q2) ID -2.5 A VGS = -4.5V, steady state, TA = +70°C (Note 7) 2
Continuous Drain Current (P-ch Q2) ID -3.8 A VGS = -4.5V, t<10s, TA = +25°C (Note 7) 2
Continuous Drain Current (P-ch Q2) ID -3 A VGS = -4.5V, t<10s, TA = +70°C (Note 7) 2
Maximum Continuous Body Diode Forward Current (P-ch Q2) IS -1.5 A Note 7 2
Pulsed Drain Current (P-ch Q2) IDM -17 A 10µs pulse, duty cycle = 1% 2
Total Power Dissipation PD 0.8 W TA = +25°C (Note 6) 2
Total Power Dissipation PD 0.5 W TA = +70°C (Note 6) 2
Total Power Dissipation PD 1.1 W TA = +25°C (Note 7) 2
Total Power Dissipation PD 0.7 W TA = +70°C (Note 7) 2
Thermal Resistance, Junction to Ambient RθJA 168 °C/W Steady state (Note 6) 2
Thermal Resistance, Junction to Ambient RθJA 120 °C/W t<10s (Note 6) 2
Thermal Resistance, Junction to Ambient RθJA 114 °C/W Steady state (Note 7) 2
Thermal Resistance, Junction to Ambient RθJA 72 °C/W t<10s (Note 7) 2
Thermal Resistance, Junction to Case RθJC 39 °C/W Note 7 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage (N-ch Q1) BVDSS 20 V VGS = 0V, ID = 250μA 3
Zero Gate Voltage Drain Current @TC = +25°C (N-ch Q1) IDSS 1 μA VDS = 16V, VGS = 0V 3
Gate-Source Leakage (N-ch Q1) IGSS -100 100 nA VGS = ±12V, VDS = 0V 3
Gate Threshold Voltage (N-ch Q1) VGS(TH) 0.4 1 V VDS = VGS, ID = 250μA 3
Static Drain-Source On-Resistance (N-ch Q1) RDS(ON) 27 35 mΩ VGS = 4.5V, ID = 4.0A 3
Static Drain-Source On-Resistance (N-ch Q1) RDS(ON) 33 43 mΩ VGS = 2.5V, ID = 2.5A 3
Static Drain-Source On-Resistance (N-ch Q1) RDS(ON) 43 56 mΩ VGS = 1.8V, ID = 1.5A 3
Diode Forward Voltage (N-ch Q1) VSD 0.4 1.1 V VGS = 0V, IS = 1A 3
Input Capacitance (N-ch Q1) Ciss 400 530 pF VDS = 10V, VGS = 0V, f = 1.0MHz 3
Output Capacitance (N-ch Q1) Coss 70 90 pF VDS = 10V, VGS = 0V, f = 1.0MHz 3
Reverse Transfer Capacitance (N-ch Q1) Crss 65 100 pF VDS = 10V, VGS = 0V, f = 1.0MHz 3
Total Gate Charge (VGS = 10V) (N-ch Q1) Qg 12 17 nC VDS = 15V, ID = 5.8A 3
Turn-On Delay Time (N-ch Q1) tD(ON) 5 10 ns VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A 3
Turn-On Rise Time (N-ch Q1) tR 8 16 ns VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A 3
Turn-Off Delay Time (N-ch Q1) tD(OFF) 25 40 ns VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A 3
Turn-Off Fall Time (N-ch Q1) tF 8 16 ns VDS = 10V, VGS = 4.5V, RG = 6Ω, IDS = 1A 3
Drain-Source Breakdown Voltage (P-ch Q2) BVDSS -20 V VGS = 0V, ID = -250μA 6
Zero Gate Voltage Drain Current @TC = +25°C (P-ch Q2) IDSS -1 μA VDS = -16V, VGS = 0V 6
Gate-Source Leakage (P-ch Q2) IGSS -100 100 nA VGS = ±12V, VDS = 0V 6
Gate Threshold Voltage (P-ch Q2) VGS(TH) -0.4 -1 V VDS = VGS, ID = -250μA 6
Static Drain-Source On-Resistance (P-ch Q2) RDS(ON) 57 74 mΩ VGS = -4.5V, ID = -3.0A 6
Static Drain-Source On-Resistance (P-ch Q2) RDS(ON) 76 110 mΩ VGS = -2.5V, ID = -1.5A 6
Static Drain-Source On-Resistance (P-ch Q2) RDS(ON) 102 168 mΩ VGS = -1.8V, ID = -1.0A 6
Diode Forward Voltage (P-ch Q2) VSD -0.8 -1 V VGS = 0V, IS = -0.6A 6
Input Capacitance (P-ch Q2) Ciss 530 705 pF VDS = -10V, VGS = 0V, f = 1.0MHz 6
Output Capacitance (P-ch Q2) Coss 70 95 pF VDS = -10V, VGS = 0V, f = 1.0MHz 6
Reverse Transfer Capacitance (P-ch Q2) Crss 60 90 pF VDS = -10V, VGS = 0V, f = 1.0MHz 6
Total Gate Charge (VGS = -4.5V) (P-ch Q2) Qg 7 10 nC VDS = -15V, ID = -6A 6
Turn-On Delay Time (P-ch Q2) tD(ON) 11 20 ns VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A 6
Turn-On Rise Time (P-ch Q2) tR 12 22 ns VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A 6
Turn-Off Delay Time (P-ch Q2) tD(OFF) 21 34 ns VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A 6
Turn-Off Fall Time (P-ch Q2) tF 13 23 ns VDS = -10V, VGS = -4.5V, RG = 6Ω, IS = -1A 6

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin • Terminals  Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMC2038LVT-7
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: dmc2038lvt-7-etched.step / dmc2038lvt-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmc2038lvt-7.step / dmc2038lvt-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (10 pp, sha256 f94e53961e1a70e9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF