component
CMSA3811A
Public Made by Adomby adom
Cmos(广东场效应半导体) , DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCMSA3811A
Cmos(广东场效应半导体) · IC · DFN-8(5x6)
CMSA3811A from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (30V, 16A), at the pin 1 corner. |
| 2 | G1 | input | Gate of the N-channel MOSFET, with VGS rated ±20V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-30V, -15A). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with VGS rated ±20V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, with VDS rated -30V; tied to pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET, with VDS rated -30V; tied to pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET, with VDS rated 30V; tied to pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET, with VDS rated 30V; tied to pin 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | DFN-8(5x6) |
| Category | |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-channel Drain-Source Voltage | VDS | 30 | V | N-channel | 1 | ||
| P-channel Drain-Source Voltage | VDS | -30 | V | P-channel | 1 | ||
| N-channel Gate-Source Voltage | VGS | -20 | 20 | V | N-channel, printed ±20 | 1 | |
| P-channel Gate-Source Voltage | VGS | -20 | 20 | V | P-channel, printed ±20 | 1 | |
| N-channel Continuous Drain Current at TC=25℃ | ID@TC=25℃ | 16 | A | N-channel, TC=25℃ | 1 | ||
| P-channel Continuous Drain Current at TC=25℃ | ID@TC=25℃ | -15 | A | P-channel, TC=25℃ | 1 | ||
| N-channel Continuous Drain Current at TC=100℃ | ID@TC=100℃ | 10 | A | N-channel, TC=100℃ | 1 | ||
| P-channel Continuous Drain Current at TC=100℃ | ID@TC=100℃ | -10 | A | P-channel, TC=100℃ | 1 | ||
| N-channel Pulsed Drain Current | IDM | 48 | A | N-channel | 1 | ||
| P-channel Pulsed Drain Current | IDM | -45 | A | P-channel | 1 | ||
| N-channel Single Pulse Avalanche Energy | EAS | 42 | mJ | N-channel, Note 1: VDD=25V, VGS=10V, L=0.5mH, IAS=13A | 1 | ||
| P-channel Single Pulse Avalanche Energy | EAS | 56 | mJ | P-channel, Note 1: VDD=-25V, VGS=-10V, L=0.5mH, IAS=-15A | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 15 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| N-channel Maximum Junction-to-Ambient Thermal Resistance (Steady-State) | RθJA | 70 | ℃/W | N-channel, Steady-State | 1 | ||
| N-channel Maximum Junction-to-Case Thermal Resistance (Steady-State) | RθJc | 8.33 | ℃/W | N-channel, Steady-State | 1 | ||
| P-channel Maximum Junction-to-Ambient Thermal Resistance (Steady-State) | RθJA | 70 | ℃/W | P-channel, Steady-State | 2 | ||
| P-channel Maximum Junction-to-Case Thermal Resistance (Steady-State) | RθJC | 8.33 | ℃/W | P-channel, Steady-State | 2 | ||
| N-channel Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| N-channel Static Drain-Source On-Resistance | RDS(ON) | 10.5 | 12 | mΩ | VGS=10V, ID=15A | 2 | |
| N-channel Static Drain-Source On-Resistance | RDS(ON) | 15 | 21 | mΩ | VGS=4.5V, ID=10A | 2 | |
| N-channel Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VGS=VDS, ID=250μA | 2 | |
| N-channel Drain-Source Leakage Current at TJ=55℃ | IDSS | 5 | uA | VDS=30V, VGS=0V, TJ=55℃ | 2 | ||
| N-channel Drain-Source Leakage Current | IDSS | 1 | uA | VDS=30V, VGS=0V | 2 | ||
| N-channel Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| N-channel Diode Continuous Forward Current | IS | 16 | A | 2 | |||
| N-channel Diode Pulse Current | IS,pulse | 48 | A | 2 | |||
| N-channel Diode Forward Voltage | VSD | 0.74 | 1.2 | V | VGS=0V, IF=1A, Tj=25℃ | 2 | |
| P-channel Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250μA | 3 | ||
| P-channel Static Drain-Source On-Resistance | RDS(ON) | 45 | 58 | mΩ | VGS=-10V, ID=-10A | 3 | |
| P-channel Static Drain-Source On-Resistance | RDS(ON) | 52 | 66 | mΩ | VGS=-4.5V, ID=-8A | 3 | |
| P-channel Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VGS=VDS, ID=-250μA | 3 | |
| P-channel Drain-Source Leakage Current (first row) | IDSS | -5 | uA | VDS=-30V, VGS=0V, | 3 | ||
| P-channel Drain-Source Leakage Current (second row) | IDSS | -1 | uA | VDS=-30V, VGS=0V | 3 | ||
| P-channel Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| P-channel Continuous Source Current | IS | -15 | A | 3 | |||
| P-channel Pulsed Source Current | ISM | -45 | A | VG=VD=0V, Force Current | 3 | ||
| P-channel Diode Forward Voltage | VSD | -0.75 | -1.2 | V | VGS=0V, I F=-1A, TJ=25℃ | 3 |
CAD (KiCad official)
- Symbol:
CMSA3811A - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
cmsa3811a-etched.step/cmsa3811a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmsa3811a.step/cmsa3811a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (5 pp, sha256
fb1d6ef708a43f26, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).