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CMSA3811A

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Cmos(广东场效应半导体) , DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CMSA3811A

Cmos(广东场效应半导体) · IC · DFN-8(5x6)

CMSA3811A from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30V, 16A), at the pin 1 corner.
2 G1 input Gate of the N-channel MOSFET, with VGS rated ±20V.
3 S2 passive Source of the P-channel MOSFET (-30V, -15A).
4 G2 input Gate of the P-channel MOSFET, with VGS rated ±20V.
5 D2 passive Drain of the P-channel MOSFET, with VDS rated -30V; tied to pin 6.
6 D2 passive Drain of the P-channel MOSFET, with VDS rated -30V; tied to pin 5.
7 D1 passive Drain of the N-channel MOSFET, with VDS rated 30V; tied to pin 8.
8 D1 passive Drain of the N-channel MOSFET, with VDS rated 30V; tied to pin 7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package DFN-8(5x6)
Category
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
N-channel Drain-Source Voltage VDS 30 V N-channel 1
P-channel Drain-Source Voltage VDS -30 V P-channel 1
N-channel Gate-Source Voltage VGS -20 20 V N-channel, printed ±20 1
P-channel Gate-Source Voltage VGS -20 20 V P-channel, printed ±20 1
N-channel Continuous Drain Current at TC=25℃ ID@TC=25℃ 16 A N-channel, TC=25℃ 1
P-channel Continuous Drain Current at TC=25℃ ID@TC=25℃ -15 A P-channel, TC=25℃ 1
N-channel Continuous Drain Current at TC=100℃ ID@TC=100℃ 10 A N-channel, TC=100℃ 1
P-channel Continuous Drain Current at TC=100℃ ID@TC=100℃ -10 A P-channel, TC=100℃ 1
N-channel Pulsed Drain Current IDM 48 A N-channel 1
P-channel Pulsed Drain Current IDM -45 A P-channel 1
N-channel Single Pulse Avalanche Energy EAS 42 mJ N-channel, Note 1: VDD=25V, VGS=10V, L=0.5mH, IAS=13A 1
P-channel Single Pulse Avalanche Energy EAS 56 mJ P-channel, Note 1: VDD=-25V, VGS=-10V, L=0.5mH, IAS=-15A 1
Total Power Dissipation PD@TC=25℃ 15 W TC=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
N-channel Maximum Junction-to-Ambient Thermal Resistance (Steady-State) RθJA 70 ℃/W N-channel, Steady-State 1
N-channel Maximum Junction-to-Case Thermal Resistance (Steady-State) RθJc 8.33 ℃/W N-channel, Steady-State 1
P-channel Maximum Junction-to-Ambient Thermal Resistance (Steady-State) RθJA 70 ℃/W P-channel, Steady-State 2
P-channel Maximum Junction-to-Case Thermal Resistance (Steady-State) RθJC 8.33 ℃/W P-channel, Steady-State 2
N-channel Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
N-channel Static Drain-Source On-Resistance RDS(ON) 10.5 12 mΩ VGS=10V, ID=15A 2
N-channel Static Drain-Source On-Resistance RDS(ON) 15 21 mΩ VGS=4.5V, ID=10A 2
N-channel Gate Threshold Voltage VGS(th) 1 3 V VGS=VDS, ID=250μA 2
N-channel Drain-Source Leakage Current at TJ=55℃ IDSS 5 uA VDS=30V, VGS=0V, TJ=55℃ 2
N-channel Drain-Source Leakage Current IDSS 1 uA VDS=30V, VGS=0V 2
N-channel Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
N-channel Diode Continuous Forward Current IS 16 A 2
N-channel Diode Pulse Current IS,pulse 48 A 2
N-channel Diode Forward Voltage VSD 0.74 1.2 V VGS=0V, IF=1A, Tj=25℃ 2
P-channel Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250μA 3
P-channel Static Drain-Source On-Resistance RDS(ON) 45 58 mΩ VGS=-10V, ID=-10A 3
P-channel Static Drain-Source On-Resistance RDS(ON) 52 66 mΩ VGS=-4.5V, ID=-8A 3
P-channel Gate Threshold Voltage VGS(th) -1 -3 V VGS=VDS, ID=-250μA 3
P-channel Drain-Source Leakage Current (first row) IDSS -5 uA VDS=-30V, VGS=0V, 3
P-channel Drain-Source Leakage Current (second row) IDSS -1 uA VDS=-30V, VGS=0V 3
P-channel Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
P-channel Continuous Source Current IS -15 A 3
P-channel Pulsed Source Current ISM -45 A VG=VD=0V, Force Current 3
P-channel Diode Forward Voltage VSD -0.75 -1.2 V VGS=0V, I F=-1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: CMSA3811A
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: cmsa3811a-etched.step / cmsa3811a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmsa3811a.step / cmsa3811a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (5 pp, sha256 fb1d6ef708a43f26, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF