# CMSA3811A

**Cmos(广东场效应半导体)** · IC · DFN-8(5x6)

CMSA3811A from Cmos(广东场效应半导体), in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (30V, 16A), at the pin 1 corner. |
| 2 | G1 | input | Gate of the N-channel MOSFET, with VGS rated ±20V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (-30V, -15A). |
| 4 | G2 | input | Gate of the P-channel MOSFET, with VGS rated ±20V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET, with VDS rated -30V; tied to pin 6. |
| 6 | D2 | passive | Drain of the P-channel MOSFET, with VDS rated -30V; tied to pin 5. |
| 7 | D1 | passive | Drain of the N-channel MOSFET, with VDS rated 30V; tied to pin 8. |
| 8 | D1 | passive | Drain of the N-channel MOSFET, with VDS rated 30V; tied to pin 7. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | DFN-8(5x6) |
| Category |  |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-channel Drain-Source Voltage | VDS |  |  | 30 | V | N-channel | 1 |
| P-channel Drain-Source Voltage | VDS |  |  | -30 | V | P-channel | 1 |
| N-channel Gate-Source Voltage | VGS | -20 |  | 20 | V | N-channel, printed ±20 | 1 |
| P-channel Gate-Source Voltage | VGS | -20 |  | 20 | V | P-channel, printed ±20 | 1 |
| N-channel Continuous Drain Current at TC=25℃ | ID@TC=25℃ |  |  | 16 | A | N-channel, TC=25℃ | 1 |
| P-channel Continuous Drain Current at TC=25℃ | ID@TC=25℃ |  |  | -15 | A | P-channel, TC=25℃ | 1 |
| N-channel Continuous Drain Current at TC=100℃ | ID@TC=100℃ |  |  | 10 | A | N-channel, TC=100℃ | 1 |
| P-channel Continuous Drain Current at TC=100℃ | ID@TC=100℃ |  |  | -10 | A | P-channel, TC=100℃ | 1 |
| N-channel Pulsed Drain Current | IDM |  |  | 48 | A | N-channel | 1 |
| P-channel Pulsed Drain Current | IDM |  |  | -45 | A | P-channel | 1 |
| N-channel Single Pulse Avalanche Energy | EAS |  |  | 42 | mJ | N-channel, Note 1: VDD=25V, VGS=10V, L=0.5mH, IAS=13A | 1 |
| P-channel Single Pulse Avalanche Energy | EAS |  |  | 56 | mJ | P-channel, Note 1: VDD=-25V, VGS=-10V, L=0.5mH, IAS=-15A | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 15 | W | TC=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| N-channel Maximum Junction-to-Ambient Thermal Resistance (Steady-State) | RθJA |  |  | 70 | ℃/W | N-channel, Steady-State | 1 |
| N-channel Maximum Junction-to-Case Thermal Resistance (Steady-State) | RθJc |  |  | 8.33 | ℃/W | N-channel, Steady-State | 1 |
| P-channel Maximum Junction-to-Ambient Thermal Resistance (Steady-State) | RθJA |  |  | 70 | ℃/W | P-channel, Steady-State | 2 |
| P-channel Maximum Junction-to-Case Thermal Resistance (Steady-State) | RθJC |  |  | 8.33 | ℃/W | P-channel, Steady-State | 2 |
| N-channel Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| N-channel Static Drain-Source On-Resistance | RDS(ON) |  | 10.5 | 12 | mΩ | VGS=10V, ID=15A | 2 |
| N-channel Static Drain-Source On-Resistance | RDS(ON) |  | 15 | 21 | mΩ | VGS=4.5V, ID=10A | 2 |
| N-channel Gate Threshold Voltage | VGS(th) | 1 |  | 3 | V | VGS=VDS, ID=250μA | 2 |
| N-channel Drain-Source Leakage Current at TJ=55℃ | IDSS |  |  | 5 | uA | VDS=30V, VGS=0V, TJ=55℃ | 2 |
| N-channel Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=30V, VGS=0V | 2 |
| N-channel Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| N-channel Diode Continuous Forward Current | IS |  |  | 16 | A |  | 2 |
| N-channel Diode Pulse Current | IS,pulse |  |  | 48 | A |  | 2 |
| N-channel Diode Forward Voltage | VSD |  | 0.74 | 1.2 | V | VGS=0V, IF=1A, Tj=25℃ | 2 |
| P-channel Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V, ID=-250μA | 3 |
| P-channel Static Drain-Source On-Resistance | RDS(ON) |  | 45 | 58 | mΩ | VGS=-10V, ID=-10A | 3 |
| P-channel Static Drain-Source On-Resistance | RDS(ON) |  | 52 | 66 | mΩ | VGS=-4.5V, ID=-8A | 3 |
| P-channel Gate Threshold Voltage | VGS(th) | -1 |  | -3 | V | VGS=VDS, ID=-250μA | 3 |
| P-channel Drain-Source Leakage Current (first row) | IDSS |  |  | -5 | uA | VDS=-30V, VGS=0V, | 3 |
| P-channel Drain-Source Leakage Current (second row) | IDSS |  |  | -1 | uA | VDS=-30V, VGS=0V | 3 |
| P-channel Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| P-channel Continuous Source Current | IS |  |  | -15 | A |  | 3 |
| P-channel Pulsed Source Current | ISM |  |  | -45 | A | VG=VD=0V, Force Current | 3 |
| P-channel Diode Forward Voltage | VSD |  | -0.75 | -1.2 | V | VGS=0V, I F=-1A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `CMSA3811A`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `cmsa3811a-etched.step` / `cmsa3811a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cmsa3811a.step` / `cmsa3811a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Cmos(广东场效应半导体) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603322200376295424) (5 pp, sha256 `fb1d6ef708a43f26`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cmsa3811a-datasheet.pdf)