component
ZXMC10A816N8TC
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownZXMC10A816N8TC
Diodes Incorporated · MOSFETs · SO-8
ZXMC10A816N8TC from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel Q1 (100 V, VGS ±20 V maximum); the pin number is inferred from the top-view layout and marking-diagram numbering, not printed as a pin table. |
| 2 | G1 | input | Gate of the N-channel Q1 with VGS limited to ±20 V per the maximum ratings. |
| 3 | S2 | passive | Source of the P-channel Q2 (-100 V, VGS ±20 V maximum); the pin number is inferred from the top-view layout and marking-diagram numbering, not printed as a pin table. |
| 4 | G2 | input | Gate of the P-channel Q2 with VGS limited to ±20 V per the maximum ratings. |
| 5 | D2 | passive | Drain of the P-channel Q2 (VDSS -100 V); the pin number is inferred from the top-view layout and marking-diagram numbering. |
| 6 | D2 | passive | Drain of the P-channel Q2 (VDSS -100 V); the pin number is inferred from the top-view layout and marking-diagram numbering. |
| 7 | D1 | passive | Drain of the N-channel Q1 (VDSS 100 V); the pin number is inferred from the top-view layout and marking-diagram numbering. |
| 8 | D1 | passive | Drain of the N-channel Q1 (VDSS 100 V); the pin number is inferred from the top-view layout and marking-diagram numbering. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage, Q1 N-Channel | VDSS | 100 | V | 2 | |||
| Drain-Source Voltage, Q2 P-Channel | VDSS | -100 | V | 2 | |||
| Gate-Source Voltage, Q1 N-Channel | VGS | -20 | 20 | V | 2 | ||
| Gate-Source Voltage, Q2 P-Channel | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current, Q1 N-Channel | ID | 2.1 | A | VGS = 10V; TA = +25°C (Notes 6, 8) | 2 | ||
| Continuous Drain Current, Q1 N-Channel | ID | 1.7 | A | VGS = 10V; TA = +70°C (Notes 6, 8) | 2 | ||
| Continuous Drain Current, Q1 N-Channel | ID | 2 | A | VGS = 10V; TA = +25°C (Notes 5, 9) | 2 | ||
| Continuous Drain Current, Q1 N-Channel | ID | 2.3 | A | VGS = 10V; TL = +25°C (Notes 8, 10) | 2 | ||
| Continuous Drain Current, Q2 P-Channel | ID | -2.2 | A | VGS = 10V; TA = +25°C (Notes 6, 8) | 2 | ||
| Continuous Drain Current, Q2 P-Channel | ID | -1.8 | A | VGS = 10V; TA = +70°C (Notes 6, 8) | 2 | ||
| Continuous Drain Current, Q2 P-Channel | ID | -1.7 | A | VGS = 10V; TA = +25°C (Notes 5, 8) | 2 | ||
| Continuous Drain Current, Q2 P-Channel | ID | -2 | A | VGS = 10V; TA = +25°C (Notes 5, 9) | 2 | ||
| Continuous Drain Current, Q2 P-Channel | ID | -2.4 | A | VGS = 10V; TL = +25°C (Notes 8, 10) | 2 | ||
| Pulsed Drain Current, Q1 N-Channel | IDM | 9.4 | A | VGS = 10V; TA = +25°C (Notes 7, 8) | 2 | ||
| Pulsed Drain Current, Q2 P-Channel | IDM | -10.5 | A | VGS = 10V; TA = +25°C (Notes 7, 8) | 2 | ||
| Continuous Source Current (Body Diode), Q1 N-Channel | IS | 3 | A | TA = +25°C (Notes 6, 8) | 2 | ||
| Continuous Source Current (Body Diode), Q2 P-Channel | IS | -3.1 | A | TA = +25°C (Notes 6, 8) | 2 | ||
| Pulsed Source Current (Body Diode), Q1 N-Channel | ISM | 9.4 | A | TA = +25°C (Notes 7, 8) | 2 | ||
| Pulsed Source Current (Body Diode), Q2 P-Channel | ISM | -10.5 | A | TA = +25°C (Notes 7, 8) | 2 | ||
| Avalanche Current, Q1 N-Channel | IAS | 1.2 | A | L = 0.1mH (Note 11) | 2 | ||
| Avalanche Current, Q2 P-Channel | IAS | -12 | A | L = 0.1mH (Note 11) | 2 | ||
| Power Dissipation | PD | 1.3 | W | TA = +25°C (Notes 5, 8) | 2 | ||
| Power Dissipation | PD | 1.8 | W | TA = +25°C (Notes 5, 9) | 2 | ||
| Power Dissipation | PD | 2.1 | W | TA = +25°C (Notes 6, 8) | 2 | ||
| Power Dissipation (first of two printed values) | PD | 2.4 | W | TL = +25°C (Notes 8, 10) | 2 | ||
| Power Dissipation (second of two printed values) | PD | 2.6 | W | TL = +25°C (Notes 8, 10) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Junction to Ambient | RJA | 100 | °C/W | Notes 5, 8 | 2 | ||
| Junction to Ambient | RJA | 70 | °C/W | Notes 5, 9 | 2 | ||
| Junction to Ambient | RJA | 60 | °C/W | Notes 6, 8 | 2 | ||
| Junction to Lead (first of two printed values) | RJL | 53 | °C/W | Notes 8, 10 | 2 | ||
| Junction to Lead (second of two printed values) | RJL | 49 | °C/W | Notes 8, 10 | 2 | ||
| Drain-Source Breakdown Voltage, Q1 N-Channel | BVDSS | 100 | V | ID = 250µA, VGS = 0V | 4 | ||
| Zero Gate Voltage Drain Current, Q1 N-Channel | IDSS | 0.5 | µA | VDS = 100V, VGS = 0V | 4 | ||
| Gate-Body Leakage, Q1 N-Channel | IGSS | 100 | nA | VGS = ±20V, VDS = 0V | 4 | ||
| Gate-Source Threshold Voltage, Q1 N-Channel | VGS(TH) | 1.7 | 2.4 | V | ID = 250µA, VDS = VGS | 4 | |
| Static Drain-Source On-State Resistance, Q1 N-Channel | RDS(ON) | 0.23 | Ω | VGS = 10V, ID = 1.0A (Note 12) | 4 | ||
| Static Drain-Source On-State Resistance, Q1 N-Channel | RDS(ON) | 0.3 | Ω | VGS = 4.5V, ID = 0.5A (Note 12) | 4 | ||
| Diode Forward Voltage, Q1 N-Channel | VSD | 0.95 | V | IS = 1.7A, VGS = 0V (Note 12) | 4 | ||
| Gate Resistance, Q1 N-Channel | RG | 0 | 3 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 4 | |
| Drain-Source Breakdown Voltage, Q2 P-Channel | BVDSS | -100 | V | ID = -250µA, VGS = 0V | 7 | ||
| Zero Gate Voltage Drain Current, Q2 P-Channel | IDSS | -0.5 | µA | VDS = -100V, VGS = 0V | 7 | ||
| Gate-Body Leakage, Q2 P-Channel | IGSS | -100 | nA | VGS = ±20V, VDS = 0V | 7 | ||
| Gate-Source Threshold Voltage, Q2 P-Channel | VGS(TH) | -2 | -3 | V | ID = -250µA, VDS = VGS | 7 | |
| Static Drain-Source On-State Resistance, Q2 P-Channel | RDS(ON) | 0.235 | Ω | VGS = -10V, ID = -1.0A (Note 12) | 7 | ||
| Static Drain-Source On-State Resistance, Q2 P-Channel | RDS(ON) | 0.32 | Ω | VGS = -4.5V, ID = -0.5A (Note 12) | 7 | ||
| Diode Forward Voltage, Q2 P-Channel | VSD | -0.95 | V | IS = -1.7A, VGS = 0V (Note 12) | 7 | ||
| Gate Resistance, Q2 P-Channel | RG | 0 | 100 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 7 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals: Finish, Matte Tin Annealed over Copper Lead Frame. | 1 |
CAD (KiCad official)
- Symbol:
ZXMC10A816N8TC - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
zxmc10a816n8tc-etched.step/zxmc10a816n8tc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxmc10a816n8tc.step/zxmc10a816n8tc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (11 pp, sha256
247e91b15616b86d, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).