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ZXMC10A816N8TC

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXMC10A816N8TC

Diodes Incorporated · MOSFETs · SO-8

ZXMC10A816N8TC from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel Q1 (100 V, VGS ±20 V maximum); the pin number is inferred from the top-view layout and marking-diagram numbering, not printed as a pin table.
2 G1 input Gate of the N-channel Q1 with VGS limited to ±20 V per the maximum ratings.
3 S2 passive Source of the P-channel Q2 (-100 V, VGS ±20 V maximum); the pin number is inferred from the top-view layout and marking-diagram numbering, not printed as a pin table.
4 G2 input Gate of the P-channel Q2 with VGS limited to ±20 V per the maximum ratings.
5 D2 passive Drain of the P-channel Q2 (VDSS -100 V); the pin number is inferred from the top-view layout and marking-diagram numbering.
6 D2 passive Drain of the P-channel Q2 (VDSS -100 V); the pin number is inferred from the top-view layout and marking-diagram numbering.
7 D1 passive Drain of the N-channel Q1 (VDSS 100 V); the pin number is inferred from the top-view layout and marking-diagram numbering.
8 D1 passive Drain of the N-channel Q1 (VDSS 100 V); the pin number is inferred from the top-view layout and marking-diagram numbering.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage, Q1 N-Channel VDSS 100 V 2
Drain-Source Voltage, Q2 P-Channel VDSS -100 V 2
Gate-Source Voltage, Q1 N-Channel VGS -20 20 V 2
Gate-Source Voltage, Q2 P-Channel VGS -20 20 V 2
Continuous Drain Current, Q1 N-Channel ID 2.1 A VGS = 10V; TA = +25°C (Notes 6, 8) 2
Continuous Drain Current, Q1 N-Channel ID 1.7 A VGS = 10V; TA = +70°C (Notes 6, 8) 2
Continuous Drain Current, Q1 N-Channel ID 2 A VGS = 10V; TA = +25°C (Notes 5, 9) 2
Continuous Drain Current, Q1 N-Channel ID 2.3 A VGS = 10V; TL = +25°C (Notes 8, 10) 2
Continuous Drain Current, Q2 P-Channel ID -2.2 A VGS = 10V; TA = +25°C (Notes 6, 8) 2
Continuous Drain Current, Q2 P-Channel ID -1.8 A VGS = 10V; TA = +70°C (Notes 6, 8) 2
Continuous Drain Current, Q2 P-Channel ID -1.7 A VGS = 10V; TA = +25°C (Notes 5, 8) 2
Continuous Drain Current, Q2 P-Channel ID -2 A VGS = 10V; TA = +25°C (Notes 5, 9) 2
Continuous Drain Current, Q2 P-Channel ID -2.4 A VGS = 10V; TL = +25°C (Notes 8, 10) 2
Pulsed Drain Current, Q1 N-Channel IDM 9.4 A VGS = 10V; TA = +25°C (Notes 7, 8) 2
Pulsed Drain Current, Q2 P-Channel IDM -10.5 A VGS = 10V; TA = +25°C (Notes 7, 8) 2
Continuous Source Current (Body Diode), Q1 N-Channel IS 3 A TA = +25°C (Notes 6, 8) 2
Continuous Source Current (Body Diode), Q2 P-Channel IS -3.1 A TA = +25°C (Notes 6, 8) 2
Pulsed Source Current (Body Diode), Q1 N-Channel ISM 9.4 A TA = +25°C (Notes 7, 8) 2
Pulsed Source Current (Body Diode), Q2 P-Channel ISM -10.5 A TA = +25°C (Notes 7, 8) 2
Avalanche Current, Q1 N-Channel IAS 1.2 A L = 0.1mH (Note 11) 2
Avalanche Current, Q2 P-Channel IAS -12 A L = 0.1mH (Note 11) 2
Power Dissipation PD 1.3 W TA = +25°C (Notes 5, 8) 2
Power Dissipation PD 1.8 W TA = +25°C (Notes 5, 9) 2
Power Dissipation PD 2.1 W TA = +25°C (Notes 6, 8) 2
Power Dissipation (first of two printed values) PD 2.4 W TL = +25°C (Notes 8, 10) 2
Power Dissipation (second of two printed values) PD 2.6 W TL = +25°C (Notes 8, 10) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Junction to Ambient RJA 100 °C/W Notes 5, 8 2
Junction to Ambient RJA 70 °C/W Notes 5, 9 2
Junction to Ambient RJA 60 °C/W Notes 6, 8 2
Junction to Lead (first of two printed values) RJL 53 °C/W Notes 8, 10 2
Junction to Lead (second of two printed values) RJL 49 °C/W Notes 8, 10 2
Drain-Source Breakdown Voltage, Q1 N-Channel BVDSS 100 V ID = 250µA, VGS = 0V 4
Zero Gate Voltage Drain Current, Q1 N-Channel IDSS 0.5 µA VDS = 100V, VGS = 0V 4
Gate-Body Leakage, Q1 N-Channel IGSS 100 nA VGS = ±20V, VDS = 0V 4
Gate-Source Threshold Voltage, Q1 N-Channel VGS(TH) 1.7 2.4 V ID = 250µA, VDS = VGS 4
Static Drain-Source On-State Resistance, Q1 N-Channel RDS(ON) 0.23 Ω VGS = 10V, ID = 1.0A (Note 12) 4
Static Drain-Source On-State Resistance, Q1 N-Channel RDS(ON) 0.3 Ω VGS = 4.5V, ID = 0.5A (Note 12) 4
Diode Forward Voltage, Q1 N-Channel VSD 0.95 V IS = 1.7A, VGS = 0V (Note 12) 4
Gate Resistance, Q1 N-Channel RG 0 3 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 4
Drain-Source Breakdown Voltage, Q2 P-Channel BVDSS -100 V ID = -250µA, VGS = 0V 7
Zero Gate Voltage Drain Current, Q2 P-Channel IDSS -0.5 µA VDS = -100V, VGS = 0V 7
Gate-Body Leakage, Q2 P-Channel IGSS -100 nA VGS = ±20V, VDS = 0V 7
Gate-Source Threshold Voltage, Q2 P-Channel VGS(TH) -2 -3 V ID = -250µA, VDS = VGS 7
Static Drain-Source On-State Resistance, Q2 P-Channel RDS(ON) 0.235 Ω VGS = -10V, ID = -1.0A (Note 12) 7
Static Drain-Source On-State Resistance, Q2 P-Channel RDS(ON) 0.32 Ω VGS = -4.5V, ID = -0.5A (Note 12) 7
Diode Forward Voltage, Q2 P-Channel VSD -0.95 V IS = -1.7A, VGS = 0V (Note 12) 7
Gate Resistance, Q2 P-Channel RG 0 100 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 7

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminals: Finish, Matte Tin Annealed over Copper Lead Frame. 1

CAD (KiCad official)

  • Symbol: ZXMC10A816N8TC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: zxmc10a816n8tc-etched.step / zxmc10a816n8tc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxmc10a816n8tc.step / zxmc10a816n8tc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (11 pp, sha256 247e91b15616b86d, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF