component
IRF7316TR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7316TR
UMW · MOSFETs · SOP-8
IRF7316TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (dual P-channel); the datasheet rates the continuous source (body diode) current IS at -2.5 A maximum. |
| 2 | G1 | input | Gate of MOSFET 1; the gate-source voltage VGS is limited to ±20 V per the absolute maximum ratings. |
| 3 | S2 | passive | Source of MOSFET 2 (dual P-channel); the datasheet rates the continuous source (body diode) current IS at -2.5 A maximum. |
| 4 | G2 | input | Gate of MOSFET 2; the gate-source voltage VGS is limited to ±20 V per the absolute maximum ratings. |
| 5 | D1,D2 | passive | Drain of the P-channel MOSFETs; the drain-source voltage VDS is -30 V and the continuous drain current ID is -4.9 A at TA=25°C per the absolute maximum ratings. |
| 6 | D1,D2 | passive | Drain of the P-channel MOSFETs; the drain-source voltage VDS is -30 V and the continuous drain current ID is -4.9 A at TA=25°C per the absolute maximum ratings. |
| 7 | D1,D2 | passive | Drain of the P-channel MOSFETs; the drain-source voltage VDS is -30 V and the continuous drain current ID is -4.9 A at TA=25°C per the absolute maximum ratings. |
| 8 | D1,D2 | passive | Drain of the P-channel MOSFETs; the drain-source voltage VDS is -30 V and the continuous drain current ID is -4.9 A at TA=25°C per the absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | ID=-250µA, VGS=0V | 3 | ||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/TJ | 0.022 | V/°C | ID=-1mA, Reference to 25°C | 3 | ||
| Gate Threshold Voltage | VGS(th) | -1 | V | VDS=VGS, ID=-250μA | 3 | ||
| Forward Transconductance | gFS | 7.7 | S | VDS=-15V, ID=-4.9A | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 42 | mΩ | VGS=-10V, ID=-4.9A ④ | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 77 | mΩ | VGS=-4.5V, ID=-3.6A ④ | 3 | ||
| Drain-to-Source Leakage Current | IDSS | -1 | µA | VDS=-24V, VGS=0V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | -25 | µA | VDS=-24V,VGS=0V,TJ=55°C | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Total Gate Charge | Qg | 23 | 34 | nC | ID=-4.9A; VDS=-15V, VGS=-10V; See Fig. 10 ④ | 3 | |
| Gate-to-Source Charge | Qgs | 3.8 | 5.7 | nC | ID=-4.9A; VDS=-15V, VGS=-10V; See Fig. 10 ④ | 3 | |
| Gate-to-Drain (Miller) Charge | Qgd | 5.9 | 8.9 | nC | ID=-4.9A; VDS=-15V, VGS=-10V; See Fig. 10 ④ | 3 | |
| Turn-On Delay Time | tD(on) | 13 | 19 | ns | VDD=-15V, ID=-1A, RG=6Ω, RD=15Ω ④ | 3 | |
| Rise Time | tr | 13 | 20 | ns | VDD=-15V, ID=-1A, RG=6Ω, RD=15Ω ④ | 3 | |
| Turn-Off Delay Time | tD(off) | 34 | 51 | ns | VDD=-15V, ID=-1A, RG=6Ω, RD=15Ω ④ | 3 | |
| Fall Time | tf | 32 | 48 | ns | VDD=-15V, ID=-1A, RG=6Ω, RD=15Ω ④ | 3 | |
| Continuous Source Current (Body Diode) | IS | -2.5 | A | 4 | |||
| Pulsed Source Current (Body Diode) | ISM | -30 | A | 4 | |||
| Diode Forward Voltage | VSD | -0.78 | -1 | V | TJ=25°C, IS=1.7A, VGS=0V ③ | 4 | |
| Reverse Recovery Time | trr | 44 | 66 | ns | TJ=25°C, IF=1.7A, dI/dt=100A/µs ③ | 4 | |
| Reverse Recovery Charge | Qrr | 42 | 63 | nC | TJ=25°C, IF=1.7A, dI/dt=100A/µs ③ | 4 | |
| Drain-Source Voltage | VDS | -30 | V | TA=25°C unless otherwise noted | 2 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA=25°C unless otherwise noted | 2 | |
| Continuous Drain Current | ID | -4.9 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | -3.9 | A | TA=70°C | 2 | ||
| Pulsed Drain Current | IDM | -30 | A | TA=25°C unless otherwise noted | 2 | ||
| Continuous Source Current (Diode Conduction) | IS | -2.5 | A | TA=25°C unless otherwise noted | 2 | ||
| Maximum Power Dissipation | PD | 2 | W | TA=25°C | 2 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TA=70°C | 2 | ||
| Single Pulse Avalanche Energy | EAS | 140 | mJ | Starting TJ=25°C, L=35mH, RG=25Ω, IAS=-2.8A (note ②) | 2 | ||
| Avalanche Current | IAR | -2.8 | A | TA=25°C unless otherwise noted | 2 | ||
| Repetitive Avalanche Energy | EAR | 0.2 | mJ | TA=25°C unless otherwise noted | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | -5 | V/ns | ISD≤-2.8A, di/dt≤150A/µs, VDD≤V(BR)DSS, TJ≤150°C (note ③) | 2 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum Junction-to-Ambient | RθJA | 62.5 | °C/W | Surface mounted on FR-4 board, t ≤ 10 sec (note ⑤) | 2 |
CAD (KiCad official)
- Symbol:
IRF7316TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7316tr-etched.step/irf7316tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7316tr.step/irf7316tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
2e0fb20b0649d7e1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).