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IRF7316TR

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UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF7316TR

UMW · MOSFETs · SOP-8

IRF7316TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (dual P-channel); the datasheet rates the continuous source (body diode) current IS at -2.5 A maximum.
2 G1 input Gate of MOSFET 1; the gate-source voltage VGS is limited to ±20 V per the absolute maximum ratings.
3 S2 passive Source of MOSFET 2 (dual P-channel); the datasheet rates the continuous source (body diode) current IS at -2.5 A maximum.
4 G2 input Gate of MOSFET 2; the gate-source voltage VGS is limited to ±20 V per the absolute maximum ratings.
5 D1,D2 passive Drain of the P-channel MOSFETs; the drain-source voltage VDS is -30 V and the continuous drain current ID is -4.9 A at TA=25°C per the absolute maximum ratings.
6 D1,D2 passive Drain of the P-channel MOSFETs; the drain-source voltage VDS is -30 V and the continuous drain current ID is -4.9 A at TA=25°C per the absolute maximum ratings.
7 D1,D2 passive Drain of the P-channel MOSFETs; the drain-source voltage VDS is -30 V and the continuous drain current ID is -4.9 A at TA=25°C per the absolute maximum ratings.
8 D1,D2 passive Drain of the P-channel MOSFETs; the drain-source voltage VDS is -30 V and the continuous drain current ID is -4.9 A at TA=25°C per the absolute maximum ratings.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V 3
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/TJ 0.022 V/°C ID=-1mA, Reference to 25°C 3
Gate Threshold Voltage VGS(th) -1 V VDS=VGS, ID=-250μA 3
Forward Transconductance gFS 7.7 S VDS=-15V, ID=-4.9A 3
Static Drain-to-Source On-Resistance RDS(ON) 42 mΩ VGS=-10V, ID=-4.9A ④ 3
Static Drain-to-Source On-Resistance RDS(ON) 77 mΩ VGS=-4.5V, ID=-3.6A ④ 3
Drain-to-Source Leakage Current IDSS -1 µA VDS=-24V, VGS=0V 3
Drain-to-Source Leakage Current IDSS -25 µA VDS=-24V,VGS=0V,TJ=55°C 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Total Gate Charge Qg 23 34 nC ID=-4.9A; VDS=-15V, VGS=-10V; See Fig. 10 ④ 3
Gate-to-Source Charge Qgs 3.8 5.7 nC ID=-4.9A; VDS=-15V, VGS=-10V; See Fig. 10 ④ 3
Gate-to-Drain (Miller) Charge Qgd 5.9 8.9 nC ID=-4.9A; VDS=-15V, VGS=-10V; See Fig. 10 ④ 3
Turn-On Delay Time tD(on) 13 19 ns VDD=-15V, ID=-1A, RG=6Ω, RD=15Ω ④ 3
Rise Time tr 13 20 ns VDD=-15V, ID=-1A, RG=6Ω, RD=15Ω ④ 3
Turn-Off Delay Time tD(off) 34 51 ns VDD=-15V, ID=-1A, RG=6Ω, RD=15Ω ④ 3
Fall Time tf 32 48 ns VDD=-15V, ID=-1A, RG=6Ω, RD=15Ω ④ 3
Continuous Source Current (Body Diode) IS -2.5 A 4
Pulsed Source Current (Body Diode) ISM -30 A 4
Diode Forward Voltage VSD -0.78 -1 V TJ=25°C, IS=1.7A, VGS=0V ③ 4
Reverse Recovery Time trr 44 66 ns TJ=25°C, IF=1.7A, dI/dt=100A/µs ③ 4
Reverse Recovery Charge Qrr 42 63 nC TJ=25°C, IF=1.7A, dI/dt=100A/µs ③ 4
Drain-Source Voltage VDS -30 V TA=25°C unless otherwise noted 2
Gate-Source Voltage VGS -20 20 V TA=25°C unless otherwise noted 2
Continuous Drain Current ID -4.9 A TA=25°C 2
Continuous Drain Current ID -3.9 A TA=70°C 2
Pulsed Drain Current IDM -30 A TA=25°C unless otherwise noted 2
Continuous Source Current (Diode Conduction) IS -2.5 A TA=25°C unless otherwise noted 2
Maximum Power Dissipation PD 2 W TA=25°C 2
Maximum Power Dissipation PD 1.3 W TA=70°C 2
Single Pulse Avalanche Energy EAS 140 mJ Starting TJ=25°C, L=35mH, RG=25Ω, IAS=-2.8A (note ②) 2
Avalanche Current IAR -2.8 A TA=25°C unless otherwise noted 2
Repetitive Avalanche Energy EAR 0.2 mJ TA=25°C unless otherwise noted 2
Peak Diode Recovery dv/dt dv/dt -5 V/ns ISD≤-2.8A, di/dt≤150A/µs, VDD≤V(BR)DSS, TJ≤150°C (note ③) 2
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 2
Maximum Junction-to-Ambient RθJA 62.5 °C/W Surface mounted on FR-4 board, t ≤ 10 sec (note ⑤) 2

CAD (KiCad official)

  • Symbol: IRF7316TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7316tr-etched.step / irf7316tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7316tr.step / irf7316tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 2e0fb20b0649d7e1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF