BSS169-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.2 V min to 2.8 V max at ID = 250 µA.
2	S	passive	Source; continuous source-drain diode current is 2.1 A at TC = 25 °C.
3	D	passive	Drain; drain-source voltage rated 100 V with continuous drain current of 2 A at TC = 25 °C.

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SOT-23(TO-236)
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			100	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID			2	A	TC = 25 °C	1
Continuous Drain Current	ID			1.8	A	TC = 70 °C	1
Continuous Drain Current	ID			1.6	A	Tb, A = 25 °C	1
Continuous Drain Current	ID			1.3	A	Tb, A = 70 °C	1
Pulsed Drain Current	IDM			7	A	t = 300 µs	1
Continuous Source-Drain Diode Current	IS			2.1	A	TC = 25 °C	1
Continuous Source-Drain Diode Current	IS			1	A	Tb, A = 25 °C	1
Single Pulse Avalanche Current	IAS			5	A	L = 0.1 mH	1
Single Pulse Avalanche Energy	EAS			1.25	mJ		1
Maximum Power Dissipation	PD			2.5	W	TC = 25 °C	1
Maximum Power Dissipation	PD			1.6	W	TC = 70 °C	1
Maximum Power Dissipation	PD			1.25	W	Tb, A = 25 °C	1
Maximum Power Dissipation	PD			0.8	W	Tb, A = 70 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Maximum Junction-to-Ambient	RthJA		75	100	°C/W	t = 5 s	1
Maximum Junction-to-Ambient (steady state, from note d)	RthJA			166	°C/W	Steady state	1
Maximum Junction-to-Foot (Drain) Steady State	RthJF		40	50	°C/W	Steady state	1
Drain-Source Breakdown Voltage	VDS	100			V	VDS = 0 V, ID = 250 µA	2
Gate-Source Threshold Voltage	VGS(th)	1.2		2.8	V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ±20 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 100 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			10	µA	VDS = 100 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	5			A	VDS 5 V, VGS = 4.5 V	2
Drain-Source On-State Resistance	RDS(on)		0.24	0.25	Ω	VGS = 10 V, ID = 1.5 A	2
Forward Transconductance	gfs	2			S	VDS = 20 V, ID = 1.5 A	2
Gate Resistance	Rg	0.3	1.4	2.8	Ω	f = 1 MHz	2
Turn-On Delay Time (VGEN = 4.5 V)	td(on)		30	45	ns	VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω	2
Rise Time (VGEN = 4.5 V)	tr		26	39	ns	VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time (VGEN = 4.5 V)	td(off)		17	26	ns	VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω	2
Fall Time (VGEN = 4.5 V)	tf		12	20	ns	VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-On Delay Time (VGEN = 10 V)	td(on)		6	12	ns	VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω	2
Rise Time (VGEN = 10 V)	tr		10	20	ns	VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-Off Delay Time (VGEN = 10 V)	td(off)		10	20	ns	VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω	2
Fall Time (VGEN = 10 V)	tf		6	12	ns	VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω	2
Continuous Source-Drain Diode Current	IS			2.1	A	TC = 25 °C	2
Pulse Diode Forward Current	ISM			20	A		2
Body Diode Voltage	VSD		0.8	1.2	V	IS = 1.3 A	2
Body Diode Reverse Recovery Time	trr		22	33	ns	IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		21	32	nC	IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Total Gate Charge	Qg		5.2	10.4	nC	VDS = 50 V, VGS = 10 V, ID = 1.6 A	2
Total Gate Charge	Qg		2.9	5.8	nC	VDS = 50 V, VGS = 4.5 V, ID = 1.6 A	2
VDS Temperature Coefficient	VDS/TJ		105		mV/°C	ID = 250 µA	2
VGS(th) Temperature Coefficient	VGS(th)/TJ		-5.2		mV/°C		2
Input Capacitance	Ciss		190		pF	VDS = 50 V, VGS = 0 V, f = 1 MHz	2
Output Capacitance	Coss		22		pF	VDS = 50 V, VGS = 0 V, f = 1 MHz	2
Reverse Transfer Capacitance	Crss		13		pF	VDS = 50 V, VGS = 0 V, f = 1 MHz	2
Gate-Source Charge	Qgs		0.75		nC		2
Gate-Drain Charge	Qgd		1.4		nC		2
Reverse Recovery Fall Time	ta		16		ns		2
Reverse Recovery Rise Time	tb		6		ns		2

CAD (land: KiCad; 3D: generated from the datasheet)

Symbol: BSS169-VB
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
3D model files: bss169-vb-etched.step / bss169-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss169-vb.step / bss169-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 e1c9311cbbfe8f29, retrieved 2026-11-13, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF

BSS169-VB

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3D Model

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