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BSS169-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsbss169-vbfactory-2.0.0extractor-text

Verified BSS169-VB

by Ray · last 13 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

13 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • •array (skip): not an array of element pairs
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: BSS169-VB · SOT-23(TO-236) · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-23
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-v89lfr7n/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 17 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ bss169-vb.kicad_sym✓ bss169-vb.kicad_mod✓ bss169-vb.step
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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
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docs Publish 0.1.0 · Ray
viewers bss169-vb: viewers rendered from the public page · Ray
bss169-vb-etched.glb bss169-vb: factory component page (tier=lcsc) · Ray
bss169-vb-etched.step bss169-vb: factory component page (tier=lcsc) · Ray
bss169-vb-hero.glb bss169-vb: hero GLB from the etched model (keeps the MPN mark) · Ray
bss169-vb-hero.overlay.json bss169-vb: hero GLB from the etched model (keeps the MPN mark) · Ray
bss169-vb.glb Publish 0.1.0 · Ray
bss169-vb.kicad_mod Publish 0.1.0 · Ray
bss169-vb.kicad_sym Publish 0.1.0 · Ray
bss169-vb.lbr Publish 0.1.0 · Ray
bss169-vb.step Publish 0.1.0 · Ray
package.json Publish 0.1.0 · Ray
page.json Set visibility: public · Ray
README.md Publish 0.1.0 · Ray
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray

BSS169-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

BSS169-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 1.2 V min to 2.8 V max at ID = 250 µA.
2 S passive Source; continuous source-drain diode current is 2.1 A at TC = 25 °C.
3 D passive Drain; drain-source voltage rated 100 V with continuous drain current of 2 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 2 A TC = 25 °C 1
Continuous Drain Current ID 1.8 A TC = 70 °C 1
Continuous Drain Current ID 1.6 A Tb, A = 25 °C 1
Continuous Drain Current ID 1.3 A Tb, A = 70 °C 1
Pulsed Drain Current IDM 7 A t = 300 µs 1
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1 A Tb, A = 25 °C 1
Single Pulse Avalanche Current IAS 5 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 1.25 mJ 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W Tb, A = 25 °C 1
Maximum Power Dissipation PD 0.8 W Tb, A = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 75 100 °C/W t = 5 s 1
Maximum Junction-to-Ambient (steady state, from note d) RthJA 166 °C/W Steady state 1
Maximum Junction-to-Foot (Drain) Steady State RthJF 40 50 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 100 V VDS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1.2 2.8 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 5 A VDS 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.24 0.25 Ω VGS = 10 V, ID = 1.5 A 2
Forward Transconductance gfs 2 S VDS = 20 V, ID = 1.5 A 2
Gate Resistance Rg 0.3 1.4 2.8 Ω f = 1 MHz 2
Turn-On Delay Time (VGEN = 4.5 V) td(on) 30 45 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time (VGEN = 4.5 V) tr 26 39 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 4.5 V) td(off) 17 26 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time (VGEN = 4.5 V) tf 12 20 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time (VGEN = 10 V) td(on) 6 12 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time (VGEN = 10 V) tr 10 20 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time (VGEN = 10 V) td(off) 10 20 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time (VGEN = 10 V) tf 6 12 ns VDD = 50 V, RL = 39 Ω, ID = 1.3 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM 20 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 1.3 A 2
Body Diode Reverse Recovery Time trr 22 33 ns IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 21 32 nC IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Total Gate Charge Qg 5.2 10.4 nC VDS = 50 V, VGS = 10 V, ID = 1.6 A 2
Total Gate Charge Qg 2.9 5.8 nC VDS = 50 V, VGS = 4.5 V, ID = 1.6 A 2
VDS Temperature Coefficient VDS/TJ 105 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ -5.2 mV/°C 2
Input Capacitance Ciss 190 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 22 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 13 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 0.75 nC 2
Gate-Drain Charge Qgd 1.4 nC 2
Reverse Recovery Fall Time ta 16 ns 2
Reverse Recovery Rise Time tb 6 ns 2

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: BSS169-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: bss169-vb-etched.step / bss169-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss169-vb.step / bss169-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 e1c9311cbbfe8f29, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF