Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

CMP90N15

Cmos(广东场效应半导体) · MOSFETs · TO-220

CMP90N15 from Cmos(广东场效应半导体), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal with a rated gate-source voltage of ±20 V and a gate threshold VGS(th) of 2.5 V minimum to 4.5 V maximum at VDS=VGS, ID=250 µA.
2 D passive Drain terminal, also connected to the metal tab, rated for 150 V minimum drain-source breakdown voltage and 90 A continuous drain current at TC=25℃.
3 S passive Source terminal, rated for 90 A continuous source current (IS) and 360 A pulsed source current (ISM).

Key specifications

Parameter Value
Manufacturer Cmos(广东场效应半导体)
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 150 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25 90 A TC=25 1
Continuous Drain Current ID@TC=100 70 A TC=100 1
Pulsed Drain Current IDM 360 A Note 1: repetitive rating; pulse width limited by maximum junction temperature 1
Single Pulse Avalanche Energy EAS 1400 mJ Note 2: TJ=25℃, VDD=50V, VGS=10V, L=1mH, IAS=53A 1
Total Power Dissipation PD@TC=25 315 W TC=25 1
Storage Temperature Range TSTG -55 175 1
Operating Junction Temperature Range TJ -55 175 1
Thermal Resistance Junction-case (Steady-State) R JC 0.48 /W 1
Drain-Source Breakdown Voltage BVDSS 150 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 16 mΩ VGS=10V, ID=45A 2
Gate Threshold Voltage VGS(th) 2.5 4.5 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=150V, VGS=0V 2
Gate-Source Leakage Current IGSS 100 nA VGS 20V, VDS=0V 2
Forward Transconductance gfs 30 S VDS=10 V, ID=20A 2
Gate Resistance Rg 4 VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 251 nC 2
Gate-Source Charge Qgs 49 nC 2
Gate-Drain Charge Qgd 99 nC 2
Turn-On Delay Time Td(on) 41 ns VDD=30V, RG=2.5Ω, RL=15Ω, VGS=10V 2
Rise Time Tr 39 ns VDD=30V, RG=2.5Ω, RL=15Ω, VGS=10V 2
Turn-Off Delay Time Td(off) 141 ns VDD=30V, RG=2.5Ω, RL=15Ω, VGS=10V 2
Fall Time Tf 61 ns VDD=30V, RG=2.5Ω, RL=15Ω, VGS=10V 2
Input Capacitance Ciss 5200 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 460 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 288 pF VDS=25V, VGS=0V, f=1MHz 2
Continuous Source Current IS 90 A 2
Pulsed Source Current ISM 360 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=70A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: CMP90N15
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: cmp90n15-etched.step / cmp90n15-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmp90n15.step / cmp90n15.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos(广东场效应半导体) datasheet (4 pp, sha256 e9fafe1d8316d793, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF