component
CMP90N15
Public Made by Adomby adom
Cmos(广东场效应半导体) MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 14d ago |
| viewers | 14d ago |
| cmp90n15-etched.glb | 14d ago |
| cmp90n15-etched.step | 14d ago |
| cmp90n15-hero.glb | 14d ago |
| cmp90n15-hero.overlay.json | 14d ago |
| cmp90n15.glb | 14d ago |
| cmp90n15.kicad_mod | 14d ago |
| cmp90n15.kicad_sym | 14d ago |
| cmp90n15.lbr | 14d ago |
| cmp90n15.step | 14d ago |
| package.json | 14d ago |
| page.json | 14d ago |
| README.md | 14d ago |
CMP90N15
Cmos(广东场效应半导体) · MOSFETs · TO-220
CMP90N15 from Cmos(广东场效应半导体), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal with a rated gate-source voltage of ±20 V and a gate threshold VGS(th) of 2.5 V minimum to 4.5 V maximum at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain terminal, also connected to the metal tab, rated for 150 V minimum drain-source breakdown voltage and 90 A continuous drain current at TC=25℃. |
| 3 | S | passive | Source terminal, rated for 90 A continuous source current (IS) and 360 A pulsed source current (ISM). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TC=25 | 90 | A | TC=25 | 1 | ||
| Continuous Drain Current | ID@TC=100 | 70 | A | TC=100 | 1 | ||
| Pulsed Drain Current | IDM | 360 | A | Note 1: repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1400 | mJ | Note 2: TJ=25℃, VDD=50V, VGS=10V, L=1mH, IAS=53A | 1 | ||
| Total Power Dissipation | PD@TC=25 | 315 | W | TC=25 | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | 1 | |||
| Thermal Resistance Junction-case (Steady-State) | R JC | 0.48 | /W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 16 | mΩ | VGS=10V, ID=45A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | 4.5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=150V, VGS=0V | 2 | ||
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS 20V, VDS=0V | 2 | ||
| Forward Transconductance | gfs | 30 | S | VDS=10 V, ID=20A | 2 | ||
| Gate Resistance | Rg | 4 | VDS=0V, VGS=0V, f=1MHz | 2 | |||
| Total Gate Charge | Qg | 251 | nC | 2 | |||
| Gate-Source Charge | Qgs | 49 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 99 | nC | 2 | |||
| Turn-On Delay Time | Td(on) | 41 | ns | VDD=30V, RG=2.5Ω, RL=15Ω, VGS=10V | 2 | ||
| Rise Time | Tr | 39 | ns | VDD=30V, RG=2.5Ω, RL=15Ω, VGS=10V | 2 | ||
| Turn-Off Delay Time | Td(off) | 141 | ns | VDD=30V, RG=2.5Ω, RL=15Ω, VGS=10V | 2 | ||
| Fall Time | Tf | 61 | ns | VDD=30V, RG=2.5Ω, RL=15Ω, VGS=10V | 2 | ||
| Input Capacitance | Ciss | 5200 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 460 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 288 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Continuous Source Current | IS | 90 | A | 2 | |||
| Pulsed Source Current | ISM | 360 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=70A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
CMP90N15 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
cmp90n15-etched.step/cmp90n15-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cmp90n15.step/cmp90n15.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (4 pp, sha256
e9fafe1d8316d793, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).