CD74HCU04M96 from Texas Instruments, in a SOIC-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	1A	input	Inverter 1 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
2	1Y	output	Inverter 1 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
3	2A	input	Inverter 2 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
4	2Y	output	Inverter 2 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
5	3A	input	Inverter 3 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
6	3Y	output	Inverter 3 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
7	GND	power_in	Ground pin; DC VCC or ground current is limited to ±50mA absolute maximum.
8	4Y	output	Inverter 4 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
9	4A	input	Inverter 4 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
10	5Y	output	Inverter 5 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
11	5A	input	Inverter 5 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
12	6Y	output	Inverter 6 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
13	6A	input	Inverter 6 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
14	VCC	power_in	Supply voltage, 2V to 6V operating range, absolute maximum -0.5V to +7V.

Key specifications

Parameter	Value
Manufacturer	Texas Instruments
Package	SOIC-14
Category	Logic ICs
Pins	14

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
High level input voltage	VIH	1.7			V	VCC = 2V, -55 to 125C	3
High level input voltage	VIH	3.6			V	VCC = 4.5V, -55 to 125C	3
High level input voltage	VIH	4.8			V	VCC = 6V, -55 to 125C	3
Low level input voltage	VIL			0.3	V	VCC = 2V, -55 to 125C	3
Low level input voltage	VIL			0.8	V	VCC = 4.5V, -55 to 125C	3
Low level input voltage	VIL			1.1	V	VCC = 6V, -55 to 125C	3
High level output voltage, CMOS loads	VOH	1.8			V	VI = VIH or VIL, IO = -0.02mA, VCC = 2V, -55 to 125C	3
High level output voltage, CMOS loads	VOH	4			V	VI = VIH or VIL, IO = -0.02mA, VCC = 4.5V, -55 to 125C	3
High level output voltage, CMOS loads	VOH	5.5			V	VI = VIH or VIL, IO = -0.02mA, VCC = 6V, -55 to 125C	3
High level output voltage, TTL loads	VOH	3.7			V	VI = VCC or GND, IO = -4mA, VCC = 4.5V, -55 to 125C	3
High level output voltage, TTL loads	VOH	5.2			V	VI = VCC or GND, IO = -5.2mA, VCC = 6V, -55 to 125C	3
Low level output voltage, CMOS loads	VOL			0.2	V	VI = VIH or VIL, IO = 0.02mA, VCC = 2V, -55 to 125C	3
Low level output voltage, CMOS loads	VOL			0.5	V	VI = VIH or VIL, IO = 0.02mA, VCC = 4.5V, -55 to 125C	3
Low level output voltage, TTL loads	VOL			0.4	V	IO = 4mA, VCC = 4.5V, -55 to 125C	3
Input leakage current	II	-1		1	µA	VI = VCC or GND, VCC = 6V, -55 to 125C	3
Quiescent device current	ICC			40	µA	VI = VCC or GND, IO = 0, VCC = 6V, -55 to 125C	3
Propagation delay, input to output Y	tPLH, tPHL			105	ns	CL = 50pF, VCC = 2V, -55 to 125C	4
Propagation delay, input to output Y	tPLH, tPHL			21	ns	CL = 50pF, VCC = 4.5V, -55 to 125C	4
Propagation delay, input to output Y	tPLH, tPHL			18	ns	CL = 50pF, VCC = 6V, -55 to 125C	4
Propagation delay, input to output Y	tPLH, tPHL		5		ns	CL = 15pF, VCC = 5V, 25C	4
Transition times	tTLH, tTHL			110	ns	CL = 50pF, VCC = 2V, -55 to 125C	4
Transition times	tTLH, tTHL			22	ns	CL = 50pF, VCC = 4.5V, -55 to 125C	4
Transition times	tTLH, tTHL			19	ns	CL = 50pF, VCC = 6V, -55 to 125C	4
Power dissipation capacitance	CPD		14		pF	VCC = 5V, per inverter, 25C	4
Supply voltage range	VCC	2		6	V		3
Input or output voltage	VI, VO	0		6	V	0V to VCC	3
Operating temperature range	TA	-55		125	°C		3
DC supply voltage	VCC	-0.5		7	V	Referenced to ground	3
DC input diode current	IIK	-20		20	mA	VI < -0.5V or VI > VCC + 0.5V	3
DC output diode current	IOK	-20		20	mA	VO < -0.5V or VO > VCC + 0.5V	3
DC drain current per output	IO	-25		25	mA	VO > -0.5V or VO < VCC + 0.5V	3
DC VCC or ground current	ICC	-50		50	mA		3
Maximum junction temperature (plastic package)	TJ			150	°C		3
Storage temperature range	Tstg	-65		150	°C		3
Maximum lead temperature				300	°C	Soldering 10s (SOIC lead tips only)	3
Thermal resistance, junction to ambient, SOIC (M)	θJA		86		°C/W	Typical, JESD 51-7	3

CAD (KiCad official)

Symbol: CD74HCU04M96
Footprint: Package_SO:SOIC-14_3.9x8.7mm_P1.27mm
3D model: SOIC-14 (KiCad packages3D, STEP)
3D model files: cd74hcu04m96-etched.step / cd74hcu04m96-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cd74hcu04m96.step / cd74hcu04m96.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Texas Instruments datasheet (18 pp, sha256 d6be952cb440cccd, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

CD74HCU04M96

Verified CD74HCU04M96

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3D Model

Symbol & Footprint

Schematic Symbol

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Datasheet

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