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CD74HCU04M96

Texas Instruments · Inverters · SOIC-14

CD74HCU04M96 from Texas Instruments, in a SOIC-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1A input Inverter 1 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
2 1Y output Inverter 1 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
3 2A input Inverter 2 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
4 2Y output Inverter 2 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
5 3A input Inverter 3 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
6 3Y output Inverter 3 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
7 GND power_in Ground pin; DC VCC or ground current is limited to ±50mA absolute maximum.
8 4Y output Inverter 4 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
9 4A input Inverter 4 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
10 5Y output Inverter 5 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
11 5A input Inverter 5 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
12 6Y output Inverter 6 output; drives ±4mA at VCC = 4.5V for TTL loads (absolute max ±25mA per output).
13 6A input Inverter 6 input; unbuffered CMOS input with VIH min 3.6V and VIL max 0.8V at VCC = 4.5V.
14 VCC power_in Supply voltage, 2V to 6V operating range, absolute maximum -0.5V to +7V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-14
Category Logic ICs
Pins 14

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
High level input voltage VIH 1.7 V VCC = 2V, -55 to 125C 3
High level input voltage VIH 3.6 V VCC = 4.5V, -55 to 125C 3
High level input voltage VIH 4.8 V VCC = 6V, -55 to 125C 3
Low level input voltage VIL 0.3 V VCC = 2V, -55 to 125C 3
Low level input voltage VIL 0.8 V VCC = 4.5V, -55 to 125C 3
Low level input voltage VIL 1.1 V VCC = 6V, -55 to 125C 3
High level output voltage, CMOS loads VOH 1.8 V VI = VIH or VIL, IO = -0.02mA, VCC = 2V, -55 to 125C 3
High level output voltage, CMOS loads VOH 4 V VI = VIH or VIL, IO = -0.02mA, VCC = 4.5V, -55 to 125C 3
High level output voltage, CMOS loads VOH 5.5 V VI = VIH or VIL, IO = -0.02mA, VCC = 6V, -55 to 125C 3
High level output voltage, TTL loads VOH 3.7 V VI = VCC or GND, IO = -4mA, VCC = 4.5V, -55 to 125C 3
High level output voltage, TTL loads VOH 5.2 V VI = VCC or GND, IO = -5.2mA, VCC = 6V, -55 to 125C 3
Low level output voltage, CMOS loads VOL 0.2 V VI = VIH or VIL, IO = 0.02mA, VCC = 2V, -55 to 125C 3
Low level output voltage, CMOS loads VOL 0.5 V VI = VIH or VIL, IO = 0.02mA, VCC = 4.5V, -55 to 125C 3
Low level output voltage, TTL loads VOL 0.4 V IO = 4mA, VCC = 4.5V, -55 to 125C 3
Input leakage current II -1 1 µA VI = VCC or GND, VCC = 6V, -55 to 125C 3
Quiescent device current ICC 40 µA VI = VCC or GND, IO = 0, VCC = 6V, -55 to 125C 3
Propagation delay, input to output Y tPLH, tPHL 105 ns CL = 50pF, VCC = 2V, -55 to 125C 4
Propagation delay, input to output Y tPLH, tPHL 21 ns CL = 50pF, VCC = 4.5V, -55 to 125C 4
Propagation delay, input to output Y tPLH, tPHL 18 ns CL = 50pF, VCC = 6V, -55 to 125C 4
Propagation delay, input to output Y tPLH, tPHL 5 ns CL = 15pF, VCC = 5V, 25C 4
Transition times tTLH, tTHL 110 ns CL = 50pF, VCC = 2V, -55 to 125C 4
Transition times tTLH, tTHL 22 ns CL = 50pF, VCC = 4.5V, -55 to 125C 4
Transition times tTLH, tTHL 19 ns CL = 50pF, VCC = 6V, -55 to 125C 4
Power dissipation capacitance CPD 14 pF VCC = 5V, per inverter, 25C 4
Supply voltage range VCC 2 6 V 3
Input or output voltage VI, VO 0 6 V 0V to VCC 3
Operating temperature range TA -55 125 °C 3
DC supply voltage VCC -0.5 7 V Referenced to ground 3
DC input diode current IIK -20 20 mA VI < -0.5V or VI > VCC + 0.5V 3
DC output diode current IOK -20 20 mA VO < -0.5V or VO > VCC + 0.5V 3
DC drain current per output IO -25 25 mA VO > -0.5V or VO < VCC + 0.5V 3
DC VCC or ground current ICC -50 50 mA 3
Maximum junction temperature (plastic package) TJ 150 °C 3
Storage temperature range Tstg -65 150 °C 3
Maximum lead temperature 300 °C Soldering 10s (SOIC lead tips only) 3
Thermal resistance, junction to ambient, SOIC (M) θJA 86 °C/W Typical, JESD 51-7 3

CAD (KiCad official)

  • Symbol: CD74HCU04M96
  • Footprint: Package_SO:SOIC-14_3.9x8.7mm_P1.27mm
  • 3D model: SOIC-14 (KiCad packages3D, STEP)
  • 3D model files: cd74hcu04m96-etched.step / cd74hcu04m96-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cd74hcu04m96.step / cd74hcu04m96.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (18 pp, sha256 d6be952cb440cccd, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF