component
IXFK94N50P2
Public Made by Adomby adom
IXYS MOSFETs, TO-264-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIXFK94N50P2
IXYS · MOSFETs · TO-264-3
IXFK94N50P2 from IXYS, in a TO-264-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage limited to ±30 V continuous and ±40 V transient, with VGS(th) of 3.0 to 5.0 V. |
| 2 | D | passive | Drain terminal (also connected to the tab); VDSS 500 V and ID25 94 A at TC = 25°C. |
| 3 | S | passive | Source terminal; continuous source-drain diode current IS of 94 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-264-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 500 | V | TJ = 25°C to 150°C | 1 | ||
| Drain-gate voltage | VDGR | 500 | V | TJ = 25°C to 150°C, RGS = 1MΩ | 1 | ||
| Gate-source voltage continuous | VGSS | -30 | 30 | V | Continuous | 1 | |
| Gate-source voltage transient | VGSM | -40 | 40 | V | Transient | 1 | |
| Continuous drain current | ID25 | 94 | A | TC = 25°C | 1 | ||
| Pulsed drain current | IDM | 240 | A | TC = 25°C, Pulse Width Limited by TJM | 1 | ||
| Avalanche current | IA | 94 | A | TC = 25°C | 1 | ||
| Single pulse avalanche energy | EAS | 3.5 | J | TC = 25°C | 1 | ||
| Power dissipation | PD | 1300 | W | TC = 25°C | 1 | ||
| Peak diode recovery dV/dt | dV/dt | 30 | V/ns | IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C | 1 | ||
| Operating junction temperature | TJ | -55 | 150 | °C | 1 | ||
| Maximum junction temperature | TJM | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Lead temperature | TL | 300 | °C | 1.6mm (0.062 in.) from Case for 10s | 1 | ||
| Soldering temperature | TSOLD | 260 | °C | Plastic Body for 10s | 1 | ||
| Drain-source breakdown voltage | BVDSS | 500 | V | VGS = 0V, ID = 1mA | 1 | ||
| Gate threshold voltage | VGS(th) | 3 | 5 | V | VDS = VGS, ID = 8mA | 1 | |
| Gate leakage current | IGSS | -200 | 200 | nA | VGS = ± 30V, VDS = 0V | 1 | |
| Drain leakage current | IDSS | 10 | μA | VDS = VDSS, VGS = 0V | 1 | ||
| Drain leakage current | IDSS | 2 | mA | VDS = VDSS, VGS = 0V, TJ = 125°C | 1 | ||
| Drain-source on-resistance | RDS(on) | 55 | mΩ | VGS = 10V, ID = 0.5 • ID25, Note 1 | 1 | ||
| Transconductance | gfs | 40 | 75 | S | VDS = 10V, ID = 0.5 • ID25, Note 1 | 2 | |
| Source-drain continuous current | IS | 94 | A | VGS = 0V | 2 | ||
| Source-drain pulsed current | ISM | 375 | A | Repetitive, Pulse Width Limited by TJM | 2 | ||
| Diode forward voltage | VSD | 1.5 | V | IF = IS, VGS = 0V, Note 1 | 2 | ||
| Junction-to-case thermal resistance | RthJC | 0.096 | °C/W | 2 | |||
| Case-to-sink thermal resistance | RthCS | 0.15 | °C/W | 2 | |||
| Reverse recovery time | trr | 250 | ns | IF = 47A, -di/dt = 100A/μs, VR = 100V, VGS = 0V | 2 | ||
| Reverse recovery charge | QRM | 1.5 | μC | IF = 47A, -di/dt = 100A/μs, VR = 100V, VGS = 0V | 2 | ||
| Maximum reverse recovery current | IRM | 13 | A | IF = 47A, -di/dt = 100A/μs, VR = 100V, VGS = 0V | 2 | ||
| Input capacitance | Ciss | 14.2 | nF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Output capacitance | Coss | 1390 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 30 | pF | VGS = 0V, VDS = 25V, f = 1MHz | 2 | ||
| Gate input resistance | RGi | 0.8 | Ω | Gate Input Resistance | 2 | ||
| Turn-on delay time | td(on) | 35 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 1Ω (External) | 2 | ||
| Rise time | tr | 15 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 1Ω (External) | 2 | ||
| Turn-off delay time | td(off) | 73 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 1Ω (External) | 2 | ||
| Fall time | tf | 12 | ns | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 1Ω (External) | 2 | ||
| Total gate charge | Qg(on) | 228 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-source charge | Qgs | 63 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Gate-drain charge | Qgd | 80 | nC | VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 | 2 | ||
| Weight TO-264 | Weight | 10 | g | TO-264 | 1 |
CAD (KiCad official)
- Symbol:
IXFK94N50P2 - Footprint:
Package_TO_SOT_THT:TO-264-3_Vertical - 3D model: TO-264-3 (KiCad packages3D, STEP)
- 3D model files:
ixfk94n50p2-etched.step/ixfk94n50p2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ixfk94n50p2.step/ixfk94n50p2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: IXYS datasheet (6 pp, sha256
6b1496779630db93, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).