main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 5h ago
viewers ixfk94n50p2: viewers · Ray 5h ago
ixfk94n50p2-etched.glb Publish 0.1.0 · Ray 5h ago
ixfk94n50p2-etched.step ixfk94n50p2: factory component page (tier=lcsc) · Ray 5h ago
ixfk94n50p2-hero.glb ixfk94n50p2: hero GLB from the etched model (keeps the MPN mark) · Ray 5h ago
ixfk94n50p2-hero.overlay.json Publish 0.1.0 · Ray 5h ago
ixfk94n50p2.glb Publish 0.1.0 · Ray 5h ago
ixfk94n50p2.kicad_mod Publish 0.1.0 · Ray 5h ago
ixfk94n50p2.kicad_sym Publish 0.1.0 · Ray 5h ago
ixfk94n50p2.lbr Publish 0.1.0 · Ray 5h ago
ixfk94n50p2.step Publish 0.1.0 · Ray 5h ago
package.json Publish 0.1.0 · Ray 5h ago
page.json Set visibility: public · Ray 5h ago
README.md Publish 0.1.0 · Ray 5h ago

IXFK94N50P2

IXYS · MOSFETs · TO-264-3

IXFK94N50P2 from IXYS, in a TO-264-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage limited to ±30 V continuous and ±40 V transient, with VGS(th) of 3.0 to 5.0 V.
2 D passive Drain terminal (also connected to the tab); VDSS 500 V and ID25 94 A at TC = 25°C.
3 S passive Source terminal; continuous source-drain diode current IS of 94 A.

Key specifications

Parameter Value
Manufacturer IXYS
Package TO-264-3
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 500 V TJ = 25°C to 150°C 1
Drain-gate voltage VDGR 500 V TJ = 25°C to 150°C, RGS = 1MΩ 1
Gate-source voltage continuous VGSS -30 30 V Continuous 1
Gate-source voltage transient VGSM -40 40 V Transient 1
Continuous drain current ID25 94 A TC = 25°C 1
Pulsed drain current IDM 240 A TC = 25°C, Pulse Width Limited by TJM 1
Avalanche current IA 94 A TC = 25°C 1
Single pulse avalanche energy EAS 3.5 J TC = 25°C 1
Power dissipation PD 1300 W TC = 25°C 1
Peak diode recovery dV/dt dV/dt 30 V/ns IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 1
Operating junction temperature TJ -55 150 °C 1
Maximum junction temperature TJM 150 °C 1
Storage temperature Tstg -55 150 °C 1
Lead temperature TL 300 °C 1.6mm (0.062 in.) from Case for 10s 1
Soldering temperature TSOLD 260 °C Plastic Body for 10s 1
Drain-source breakdown voltage BVDSS 500 V VGS = 0V, ID = 1mA 1
Gate threshold voltage VGS(th) 3 5 V VDS = VGS, ID = 8mA 1
Gate leakage current IGSS -200 200 nA VGS = ± 30V, VDS = 0V 1
Drain leakage current IDSS 10 μA VDS = VDSS, VGS = 0V 1
Drain leakage current IDSS 2 mA VDS = VDSS, VGS = 0V, TJ = 125°C 1
Drain-source on-resistance RDS(on) 55 mΩ VGS = 10V, ID = 0.5 • ID25, Note 1 1
Transconductance gfs 40 75 S VDS = 10V, ID = 0.5 • ID25, Note 1 2
Source-drain continuous current IS 94 A VGS = 0V 2
Source-drain pulsed current ISM 375 A Repetitive, Pulse Width Limited by TJM 2
Diode forward voltage VSD 1.5 V IF = IS, VGS = 0V, Note 1 2
Junction-to-case thermal resistance RthJC 0.096 °C/W 2
Case-to-sink thermal resistance RthCS 0.15 °C/W 2
Reverse recovery time trr 250 ns IF = 47A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 2
Reverse recovery charge QRM 1.5 μC IF = 47A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 2
Maximum reverse recovery current IRM 13 A IF = 47A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 2
Input capacitance Ciss 14.2 nF VGS = 0V, VDS = 25V, f = 1MHz 2
Output capacitance Coss 1390 pF VGS = 0V, VDS = 25V, f = 1MHz 2
Reverse transfer capacitance Crss 30 pF VGS = 0V, VDS = 25V, f = 1MHz 2
Gate input resistance RGi 0.8 Ω Gate Input Resistance 2
Turn-on delay time td(on) 35 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 1Ω (External) 2
Rise time tr 15 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 1Ω (External) 2
Turn-off delay time td(off) 73 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 1Ω (External) 2
Fall time tf 12 ns VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25, RG = 1Ω (External) 2
Total gate charge Qg(on) 228 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 2
Gate-source charge Qgs 63 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 2
Gate-drain charge Qgd 80 nC VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 2
Weight TO-264 Weight 10 g TO-264 1

CAD (KiCad official)

  • Symbol: IXFK94N50P2
  • Footprint: Package_TO_SOT_THT:TO-264-3_Vertical
  • 3D model: TO-264-3 (KiCad packages3D, STEP)
  • 3D model files: ixfk94n50p2-etched.step / ixfk94n50p2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ixfk94n50p2.step / ixfk94n50p2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: IXYS datasheet (6 pp, sha256 6b1496779630db93, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF