component
MJD44H11
Public Made by Adomby adom
GOODWORK Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdownMJD44H11
GOODWORK · Bipolar (BJT) · TO-252
MJD44H11 from GOODWORK, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; emitter-base voltage BVEBO is rated 5 V max. |
| 2 | C | passive | Collector, also the metal tab; collector-base voltage 100 V, collector-emitter voltage 80 V, DC current 8 A and pulse current 16 A. |
| 3 | E | passive | Emitter of the NPN transistor, the common return for the collector current of up to 8 A DC. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 100 | V | IC = 100μA,IE = 0 | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | 80 | V | IC = 10mA,IB = 0 | 2 | ||
| Emitter-base breakdown voltage | BVEBO | 5 | V | IE = 100μA,IC = 0 | 2 | ||
| Collector cut-off current | ICBO | 10 | μA | VCB = 80V,VBE = 0 | 2 | ||
| Emitter cut-off current | IEBO | 50 | μA | VEB = 5V,IC = 0 | 2 | ||
| DC current gain | hFE | 60 | VCE= 1V,IC= 2A | 2 | |||
| DC current gain | hFE | 40 | VCE= 1V,IC= 4A | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 1 | V | IC = 8A,IB = 0.4A | 2 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.5 | V | IC = 8A,IB = 0.8A | 2 | ||
| Transition frequency | fT | 50 | MHz | VCE = 10V,IB = 0.5A | 2 | ||
| Output Capacitance | Cob | 130 | pF | VCB = 10V,IE =0, f=1MHz | 2 | ||
| Collector-base voltage | BVCBO | 100 | V | 1 | |||
| Collector-emitter voltage | BVCEO | 80 | V | 1 | |||
| Emitter-base voltage | BVEBO | 5 | V | 1 | |||
| Collector current (DC) | IC | 8 | A | 1 | |||
| Collector current Pulse | ICP | 16 | A | 1 | |||
| Collector power dissipation | PC | 1.75 | W | Ta=25℃ | 1 | ||
| Collector power dissipation | PC | 20 | W | TC=25℃ | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -65 | 150 | ℃ | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | Abs | TO-252 Plastic-Encapsulate Transistors Absolute Maximum Rating (TC=25℃ unless otherwise noted) | 1 |
CAD (KiCad official)
- Symbol:
MJD44H11 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
mjd44h11-etched.step/mjd44h11-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mjd44h11.step/mjd44h11.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOODWORK datasheet (3 pp, sha256
1e943c87b96eabed, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).