Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

MJD44H11

GOODWORK · Bipolar (BJT) · TO-252

MJD44H11 from GOODWORK, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; emitter-base voltage BVEBO is rated 5 V max.
2 C passive Collector, also the metal tab; collector-base voltage 100 V, collector-emitter voltage 80 V, DC current 8 A and pulse current 16 A.
3 E passive Emitter of the NPN transistor, the common return for the collector current of up to 8 A DC.

Key specifications

Parameter Value
Manufacturer GOODWORK
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO 100 V IC = 100μA,IE = 0 2
Collector-emitter breakdown voltage BVCEO 80 V IC = 10mA,IB = 0 2
Emitter-base breakdown voltage BVEBO 5 V IE = 100μA,IC = 0 2
Collector cut-off current ICBO 10 μA VCB = 80V,VBE = 0 2
Emitter cut-off current IEBO 50 μA VEB = 5V,IC = 0 2
DC current gain hFE 60 VCE= 1V,IC= 2A 2
DC current gain hFE 40 VCE= 1V,IC= 4A 2
Collector-emitter saturation voltage VCE(sat) 1 V IC = 8A,IB = 0.4A 2
Base-emitter saturation voltage VBE(sat) 1.5 V IC = 8A,IB = 0.8A 2
Transition frequency fT 50 MHz VCE = 10V,IB = 0.5A 2
Output Capacitance Cob 130 pF VCB = 10V,IE =0, f=1MHz 2
Collector-base voltage BVCBO 100 V 1
Collector-emitter voltage BVCEO 80 V 1
Emitter-base voltage BVEBO 5 V 1
Collector current (DC) IC 8 A 1
Collector current Pulse ICP 16 A 1
Collector power dissipation PC 1.75 W Ta=25℃ 1
Collector power dissipation PC 20 W TC=25℃ 1
Junction temperature Tj 150 ℃ 1
Storage temperature Tstg -65 150 ℃ 1

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing Abs TO-252 Plastic-Encapsulate Transistors Absolute Maximum Rating (TC=25℃ unless otherwise noted) 1

CAD (KiCad official)

  • Symbol: MJD44H11
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: mjd44h11-etched.step / mjd44h11-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mjd44h11.step / mjd44h11.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOODWORK datasheet (3 pp, sha256 1e943c87b96eabed, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF