component
IRFS7430TRL7PP
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-263-7. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRFS7430TRL7PP
Infineon Technologies · MOSFETs · TO-263-7
IRFS7430TRL7PP from Infineon Technologies, in a TO-263-7. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated ±20 V with a typical threshold of 3.0 V (2.2 to 3.9 V) at ID = 250µA. |
| 2 | S | passive | Source; continuous drain current is 240A wire-bond limited (522A silicon limited) at TC = 25°C. |
| 3 | S | passive | Source; continuous drain current is 240A wire-bond limited (522A silicon limited) at TC = 25°C. |
| 4 | D | passive | Drain, connected to the exposed tab (no separate lead at position 4); VDSS is 40V with RDS(on) of 0.55mΩ typ and 0.75mΩ max at VGS = 10V, ID = 100A. |
| 5 | S | passive | Source; continuous drain current is 240A wire-bond limited (522A silicon limited) at TC = 25°C. |
| 6 | S | passive | Source; continuous drain current is 240A wire-bond limited (522A silicon limited) at TC = 25°C. |
| 7 | S | passive | Source; continuous drain current is 240A wire-bond limited (522A silicon limited) at TC = 25°C. |
| 8 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-263-7 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward Transconductance | gfs | 176 | S | VDS = 10V, ID =100A | 3 | ||
| Total Gate Charge | Qg | 305 | 460 | nC | ID = 100A | 3 | |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 0.55 | 0.75 | mΩ | VGS = 10V, ID = 100A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2.2 | 3 | 3.9 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-to-Source Leakage Current | IDSS | 1 | µA | VDS =40 V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current (TJ = 125°C) | IDSS | 150 | µA | VDS =40V,VGS = 0V,TJ =125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS = -20V | 2 | ||
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | TJ = 25°C,IS = 100A,VGS = 0V | 3 | |
| Continuous Source Current | IS | 522 | A | 3 | |||
| Pulsed Source Current | ISM | 1200 | A | 3 | |||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 522 | A | TC = 25°C | 2 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 369 | A | TC = 100°C | 2 | ||
| Continuous Drain Current, VGS @ 10V (Wire Bond Limited) | ID | 240 | A | TC = 25°C | 2 | ||
| Pulsed Drain Current | IDM | 1200 | A | 2 | |||
| Maximum Power Dissipation | PD | 375 | W | TC = 25°C | 2 | ||
| Linear Derating Factor | 2.5 | W/°C | 2 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 2 | ||
| Soldering Temperature, for 10 seconds (1.6mm from case) | 300 | 2 | |||||
| Single Pulse Avalanche Energy (Thermally limited) | EAS | 764 | mJ | 2 | |||
| Single Pulse Avalanche Energy (Thermally limited) | EAS | 1454 | mJ | 2 | |||
| Junction-to-Case | RθJC | 0.4 | °C/W | 2 | |||
| Junction-to-Ambient | RθJA | 40 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRFS7430TRL7PP - Footprint:
Package_TO_SOT_SMD:TO-263-7_TabPin8 - 3D model: TO-263-7 (KiCad packages3D, STEP)
- 3D model files:
irfs7430trl7pp-etched.step/irfs7430trl7pp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irfs7430trl7pp.step/irfs7430trl7pp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (11 pp, sha256
0059fd36958be23f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).