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Contents

README

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OSG80R300FF

ORIENTAL SEMI · MOSFETs · TO-220F

OSG80R300FF from ORIENTAL SEMI, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±30 V and threshold voltage VGS(th) 2.9 to 3.9 V at ID=250 μA.
2 D passive Drain; rated VDS 800 V with continuous drain current 15 A at TC=25 °C and pulsed 45 A.
3 S passive Source; main current return terminal, body diode continuous forward current IS 15 A at TC=25 °C.

Key specifications

Parameter Value
Manufacturer ORIENTAL SEMI
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 800 V VGS=0 V, ID=250 μA 2
Drain-source breakdown voltage (Tj=150 °C) BVDSS 850 V VGS=0 V, ID=250 μA, Tj=150 °C 2
Gate threshold voltage VGS(th) 2.9 3.9 V VDS=VGS, ID=250 μA 2
Drain-source on-state resistance RDS(ON) 0.24 0.3 Ω VGS=10 V, ID=7.5 A 2
Drain-source on-state resistance (Tj=150 °C) RDS(ON) 0.64 Ω VGS=10 V, ID=7.5 A, Tj=150 °C 2
Gate-source leakage current (positive) IGSS 100 nA VGS=30 V 2
Gate-source leakage current (negative) IGSS -100 nA VGS=-30 V 2
Drain-source leakage current IDSS 5 μA VDS=800 V, VGS=0 V 2
Drain-source voltage VDS 800 V 2
Gate-source voltage VGS -30 30 V 2
Continuous drain current ID 15 A TC=25 °C 2
Continuous drain current ID 9.5 A TC=100 °C 2
Pulsed drain current ID, pulse 45 A TC=25 °C 2
Continuous diode forward current IS 15 A TC=25 °C 2
Diode pulsed current IS, pulse 45 A TC=25 °C 2
Power dissipation PD 34 W TC=25 °C 2
Single pulsed avalanche energy EAS 410 mJ 2
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0…480 V 2
Reverse diode dv/dt dv/dt 15 V/ns VDS=0…480 V, ISD≤ID 2
Operation and storage temperature Tstg, Tj -55 150 °C 2
Thermal resistance, junction-case RθJC 3.68 °C/W 2
Thermal resistance, junction-ambient RθJA 62.5 °C/W 1 in² FR-4 board, 2oz Cu, still air, Ta=25 °C (note 4) 2

CAD (KiCad official)

  • Symbol: OSG80R300FF
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ORIENTAL SEMI datasheet (9 pp, sha256 7c94895894dba016, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF