component
OSG80R300FF
Public Made by Adomby adom
ORIENTAL SEMI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownOSG80R300FF
ORIENTAL SEMI · MOSFETs · TO-220F
OSG80R300FF from ORIENTAL SEMI, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±30 V and threshold voltage VGS(th) 2.9 to 3.9 V at ID=250 μA. |
| 2 | D | passive | Drain; rated VDS 800 V with continuous drain current 15 A at TC=25 °C and pulsed 45 A. |
| 3 | S | passive | Source; main current return terminal, body diode continuous forward current IS 15 A at TC=25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ORIENTAL SEMI |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 800 | V | VGS=0 V, ID=250 μA | 2 | ||
| Drain-source breakdown voltage (Tj=150 °C) | BVDSS | 850 | V | VGS=0 V, ID=250 μA, Tj=150 °C | 2 | ||
| Gate threshold voltage | VGS(th) | 2.9 | 3.9 | V | VDS=VGS, ID=250 μA | 2 | |
| Drain-source on-state resistance | RDS(ON) | 0.24 | 0.3 | Ω | VGS=10 V, ID=7.5 A | 2 | |
| Drain-source on-state resistance (Tj=150 °C) | RDS(ON) | 0.64 | Ω | VGS=10 V, ID=7.5 A, Tj=150 °C | 2 | ||
| Gate-source leakage current (positive) | IGSS | 100 | nA | VGS=30 V | 2 | ||
| Gate-source leakage current (negative) | IGSS | -100 | nA | VGS=-30 V | 2 | ||
| Drain-source leakage current | IDSS | 5 | μA | VDS=800 V, VGS=0 V | 2 | ||
| Drain-source voltage | VDS | 800 | V | 2 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Continuous drain current | ID | 15 | A | TC=25 °C | 2 | ||
| Continuous drain current | ID | 9.5 | A | TC=100 °C | 2 | ||
| Pulsed drain current | ID, pulse | 45 | A | TC=25 °C | 2 | ||
| Continuous diode forward current | IS | 15 | A | TC=25 °C | 2 | ||
| Diode pulsed current | IS, pulse | 45 | A | TC=25 °C | 2 | ||
| Power dissipation | PD | 34 | W | TC=25 °C | 2 | ||
| Single pulsed avalanche energy | EAS | 410 | mJ | 2 | |||
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0…480 V | 2 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0…480 V, ISD≤ID | 2 | ||
| Operation and storage temperature | Tstg, Tj | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction-case | RθJC | 3.68 | °C/W | 2 | |||
| Thermal resistance, junction-ambient | RθJA | 62.5 | °C/W | 1 in² FR-4 board, 2oz Cu, still air, Ta=25 °C (note 4) | 2 |
CAD (KiCad official)
- Symbol:
OSG80R300FF - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ORIENTAL SEMI datasheet (9 pp, sha256
7c94895894dba016, retrieved 2026-11-06, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).